| No. |
Part Name |
Description |
Manufacturer |
| 1 |
5B30 |
Isolated mV Input - 4 Hz Bandwidth Signal Conditioning Module |
Analog Devices |
| 2 |
5B30-01 |
Isolated mV Input - 4 Hz Bandwidth Signal Conditioning Module |
Analog Devices |
| 3 |
5B30-02 |
Isolated mV Input - 4 Hz Bandwidth Signal Conditioning Module |
Analog Devices |
| 4 |
5B30-03 |
Isolated mV Input - 4 Hz Bandwidth Signal Conditioning Module |
Analog Devices |
| 5 |
5B30-04 |
Isolated mV Input - 4 Hz Bandwidth Signal Conditioning Module |
Analog Devices |
| 6 |
5B30-05 |
Isolated mV Input - 4 Hz Bandwidth Signal Conditioning Module |
Analog Devices |
| 7 |
5B30-06 |
Isolated mV Input - 4 Hz Bandwidth Signal Conditioning Module |
Analog Devices |
| 8 |
5B30-CUSTOM |
Isolated mV Input - 4 Hz Bandwidth Signal Conditioning Module |
Analog Devices |
| 9 |
BZM55B30 |
Silicon Epitaxial Planar Z-Diodes |
Vishay |
| 10 |
BZS55B30 |
Discrete Devices-Diode-Zener Diode & Array |
Taiwan Semiconductor |
| 11 |
BZT55B30 |
Discrete Devices-Diode-Zener Diode & Array |
Taiwan Semiconductor |
| 12 |
BZT585B30T |
Discrete - Diodes (Less than 0.5A) - Zener Diodes |
Diodes |
| 13 |
BZT585B30T-7 |
Discrete - Diodes (Less than 0.5A) - Zener Diodes |
Diodes |
| 14 |
BZV55B30 |
Discrete Devices-Diode-Zener Diode & Array |
Taiwan Semiconductor |
| 15 |
BZX55B30 |
Discrete Devices-Diode-Zener Diode & Array |
Taiwan Semiconductor |
| 16 |
BZX55B30 |
Silicon Epitaxial Planar Z-Diodes |
Vishay |
| 17 |
BZX85B30 |
Silicon Epitaxial Planar Z-Diodes |
Vishay |
| 18 |
BZY55B30 |
Discrete Devices-Diode-Zener Diode & Array |
Taiwan Semiconductor |
| 19 |
BZY85B30 |
Silicon Z-diodes for stabilizing voltages and generating reference voltages |
AEG-TELEFUNKEN |
| 20 |
RZ3135B30W |
Pulsed Power NPN Transistor for S-BAND Radar |
Philips |
| 21 |
TV05B300P-G |
Transient Voltage Suppressor (TVS), PPPM=500Watts, VRWM=30V, Tolerance=0% |
Comchip Technology |
| | | |
