| No. |
Part Name |
Description |
Manufacturer |
| 1 |
FX5545G105 |
Industry Smallest and Low Profile 6.5W 2.0A DC/DC Buck Converter with High Output Density Power |
Vishay |
| 2 |
FX5545G1052V7B1 |
Industry Smallest and Low Profile 6.5W 2.0A DC/DC Buck Converter with High Output Power Density |
Vishay |
| 3 |
FX5545G1052V7B5 |
Industry Smallest and Low Profile 6.5W 2.0A DC/DC Buck Converter with High Output Power Density |
Vishay |
| 4 |
FX5545G1052V7T1 |
Industry Smallest and Low Profile 6.5W 2.0A DC/DC Buck Converter with High Output Power Density |
Vishay |
| 5 |
FX5545G1052V7T2 |
Industry Smallest and Low Profile 6.5W 2.0A DC/DC Buck Converter with High Output Power Density |
Vishay |
| 6 |
FX5545G106 |
Industry Smallest and Low Profile 10W 2A DC/DC Boost Converter with High Output Density Power |
Vishay |
| 7 |
FX5545G108 |
The Smallest and Low Profile, 0.9V to 3.6V, 4A with 570W/in3 Density Power, Efficiency up to 95% DC/DC Buck Coverter |
Vishay |
| 8 |
GT15G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 9 |
GT25G101 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 10 |
GT25G101(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 11 |
GT25G101SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS) |
TOSHIBA |
| 12 |
GT25G102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 13 |
GT25G102(SM) |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 14 |
GT25G102SM |
N CHANNEL IGBT (STROBE FLASH APPLICATIONS) |
TOSHIBA |
| 15 |
GT5G102 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 16 |
GT5G103 |
INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT STROBE FLASH APPLICATIONS |
TOSHIBA |
| 17 |
S1D15G10D08B000 |
LCD drivers equipped with the liquid crystal drive power circuit |
Epson Company |
| 18 |
SSM5G10TU |
Multi-chip discrete device (P-ch + SBD) |
TOSHIBA |
| 19 |
T355G105J035AS |
TANTALUM DIPPED/RADIAL |
Kemet Corporation |
| 20 |
T355G105K035AS |
TANTALUM DIPPED/RADIAL |
Kemet Corporation |
| 21 |
T355G105M035AS |
TANTALUM DIPPED/RADIAL |
Kemet Corporation |
| 22 |
TK65G10N1 |
Power MOSFET (N-ch single 60V<VDSS≤150V) |
TOSHIBA |
| | | |
