No. |
Part Name |
Description |
Manufacturer |
1 |
DM75L51 |
TRI-STATE 4-Bit D Type Registers |
National Semiconductor |
2 |
DM85L51 |
TRI-STATE 4-Bit D Type Registers |
National Semiconductor |
3 |
HYB25L512160AC |
512MBit Mobile-RAM |
Infineon |
4 |
HYB25L512160AC-7.5 |
Specialty DRAMs - 512M (32Mx16) 133MHz 3-3-3 |
Infineon |
5 |
HYB25L512160AC-75 |
512MBit Mobile-RAM |
Infineon |
6 |
HYE25L512160AC-7.5 |
Specialty DRAMs - 512M (32Mx16)133MHz 3-3-3 Ext. Temp. |
Infineon |
7 |
KT835L51 |
Slotted optical switch phototransistor output. IR transmissive polysulfone discrete shells. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
8 |
KT845L51 |
Slotted optical switch phototransistor output. Opaque polysulfone discrete shells. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches. |
Optek Technology |
9 |
KT865L51 |
Slotted optical switch phototransistor output. IR transmissive polysulpone discrete shells with .02inches. Electrical parameter A lead spacing .220 inches. Aperture width in front of sensor .050 inches. Aperture width in front of emitter . |
Optek Technology |
10 |
KT875L51 |
Slotted optical switch phototransistor output. Opaque polysulpone discrete shells with .02 inches SQ, leads. Electrical parameter A lead spacing .220 inches. Aperture in front of sensor .050 inches. Aperture in front of emitter .010 inches |
Optek Technology |
11 |
MT55L512L18P |
8Mb ZBT SRAM |
Micron Technology |
12 |
MT55L512L18P-1 |
8Mb ZBT SRAM |
Micron Technology |
13 |
MT55L512V18P |
8Mb ZBT SRAM |
Micron Technology |
14 |
OPB365L51 |
Slotted optical switch |
Optek Technology |
15 |
OPB375L51 |
Slotted optical switch |
Optek Technology |
16 |
OPB835L51 |
Slotted optical switch |
Optek Technology |
17 |
OPB845L51 |
Slotted optical switch |
Optek Technology |
18 |
XRT95L51 |
OC-48 ATM UNI/POS/Mapper IC |
Exar |
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