No. |
Part Name |
Description |
Manufacturer |
1 |
15040-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 75VDC |
NTE Electronics |
2 |
15043-ECG |
Surge arrester (gas filled). Nominal breakdown voltage 145VDC |
NTE Electronics |
3 |
24LC41-IP |
1K/4K2.5VDualMode/DualPortI2CSerialEEPROM |
Microchip |
4 |
24LC41-P |
1K/4K2.5VDualMode/DualPortI2CSerialEEPROM |
Microchip |
5 |
2N3055 |
High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. |
USHA India LTD |
6 |
2N5294 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcer = 75Vdc, Vcbo = 80Vdc, Veb = 7Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
7 |
2N5296 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 40Vdc, Vcer = 50Vdc, Vcbo = 60Vdc, Veb = 5Vdc, Ic = 4Adc, Ib = 2Adc, PD = 36W. |
USHA India LTD |
8 |
2N6107 |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 7Adc, PD = 40W. |
USHA India LTD |
9 |
2N6292 |
Silicon plastic power NPN transistor. General-purpose switching and amplifier applications. Vceo = 70Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 7Adc, Ib = 3Adc, PD = 40W. |
USHA India LTD |
10 |
3425L150DR |
Resettable PTC. Ihold = 1.50A, Itrip = 3.0, Vmax = 15Vdc. Reel quantity 1500. |
Littelfuse |
11 |
3425L200DR |
Resettable PTC. Ihold = 2.00A, Itrip = 4.0, Vmax = 15Vdc. Reel quantity 1500. |
Littelfuse |
12 |
3425L250DR |
Resettable PTC. Ihold = 2.50A, Itrip = 5.0, Vmax = 15Vdc. Reel quantity 1500. |
Littelfuse |
13 |
546 |
DC/DC Converters ±15VDC Output |
Burr Brown |
14 |
AHV2815VDF/CH |
ADVANCED ANALOG HYBRID-HIGH RELIABILITY DC/DC CONVERTERS |
International Rectifier |
15 |
AHV2815VDF/ES |
ADVANCED ANALOG HYBRID-HIGH RELIABILITY DC/DC CONVERTERS |
International Rectifier |
16 |
AHV2815VDF/HB |
ADVANCED ANALOG HYBRID-HIGH RELIABILITY DC/DC CONVERTERS |
International Rectifier |
17 |
APD245VDTR-E1 |
Discrete - Rectifiers (0.5A and higher) - Schottky / SBR Rectifiers |
Diodes |
18 |
APD245VDTR-G1 |
Discrete - Rectifiers (0.5A and higher) - Schottky / SBR Rectifiers |
Diodes |
19 |
B3A45VD |
DPAK PACKAGE |
Korea Electronics (KEC) |
20 |
BD241A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
21 |
BD241B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
22 |
BD241C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
23 |
BD241C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc, Ic = 3Adc, Pd = 40W |
USHA India LTD |
24 |
BD242A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vces = 70Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
25 |
BD242B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vces = 90Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
26 |
BD242C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
27 |
BD242C |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vces = 115Vdc, Veb = 5Vdc Ic = 3Adc, PD = 40W. |
USHA India LTD |
28 |
BD243A |
NPN silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
29 |
BD243B |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
30 |
BD243C |
NPN silicon plastic power NPN transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 6Adc, Pd = 65W |
USHA India LTD |
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