| No. |
Part Name |
Description |
Manufacturer |
| 1 |
2N1700 |
Silicon N-P-N power switching transistor. 60V, 5W. |
General Electric Solid State |
| 2 |
2N3055 |
High power NPN transistor. General-purpose switching and amplifier application. Vceo = 60Vdc, Vcer = 70Vdc, Vcb = 100Vdc, Veb = 15Vdc, Ic = 7Adc, Ib = 7Adc, PD = 115W. |
USHA India LTD |
| 3 |
2N3441 |
Medium power silicon N-P-N transistor. 160V, 25W. |
General Electric Solid State |
| 4 |
2N4898 |
Silicon P-N-P medium power transistor. 40V, 25W. |
General Electric Solid State |
| 5 |
2N4899 |
Silicon P-N-P medium power transistor. 60V, 25W. |
General Electric Solid State |
| 6 |
2N4900 |
Silicon P-N-P medium power transistor. 80V, 25W. |
General Electric Solid State |
| 7 |
2N6246 |
Epitaxial-base, silicon P-N-P high-power transistor. -70V, 125W. |
General Electric Solid State |
| 8 |
2N6247 |
Epitaxial-base, silicon P-N-P high-power transistor. -90V, 125W. |
General Electric Solid State |
| 9 |
2N6248 |
Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. |
General Electric Solid State |
| 10 |
2N6253 |
High-power silicon N-P-N transistor. 55V, 115W. |
General Electric Solid State |
| 11 |
2N6469 |
Epitaxial-base, silicon P-N-P high-power transistor. -50V, 125W. |
General Electric Solid State |
| 12 |
2N6518 |
High voltage transistor. Collector-emitter voltage: Vceo = -250V. Collector-base voltage: Vcbo = -250V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 13 |
2N6519 |
High voltage transistor. Collector-emitter voltage: Vceo = -300V. Collector-base voltage: Vcbo = -300V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 14 |
2N6520 |
High voltage transistor. Collector-emitter voltage: Vceo = -350V. Collector-base voltage: Vcbo = -350V. Collector dissipation: Pc(max) = 0.625W. |
USHA India LTD |
| 15 |
2SA1625 |
High voltage switch. Collector-base voltage: Vcbo = -400V. Collector-emitter voltage: Vceo = -400V. Emitter-base voltage Vebo = -7V. Collector dissipation: Pc(max) = o.75W. |
USHA India LTD |
| 16 |
2SB1116 |
Audio frequency power amplifier medium speed switching. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -50V. Emitter-base voltage Vebo = -6V. Collector dissipation: Pc(max) = 0,75W. |
USHA India LTD |
| 17 |
2SB1116A |
Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = -80V. Collector-emitter voltage Vceo = -60V. Emitter-base voltage Vebo = -6V. Collector dissipation Pc(max) = 0,75W. |
USHA India LTD |
| 18 |
2SD1616A |
Transistor. Audio frequency power amplifier medium speed switching. Collector-base voltage Vcbo = 120V. Collector-emitter voltage Vceo = 60V. Emitter-base voltage Vebo = 6V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 1A. |
USHA India LTD |
| 19 |
2SD5041 |
Transistor. AF output amplifier for electronic flash unit. Collector-base voltage Vcbo = 40V. Collector-emitter voltage Vceo = 20V. Emitter-base voltage Vebo = 7V. Collector dissipation Pc(max) = 0.75W. Collector current Ic = 5A. |
USHA India LTD |
| 20 |
40347 |
Silicon N-P-N transistor. 60V, 8.75W. |
General Electric Solid State |
| 21 |
40348 |
Silicon N-P-N transistor. 90V, 8.75W. |
General Electric Solid State |
| 22 |
BD243 |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 55V, 65W. |
General Electric Solid State |
| 23 |
BD243A |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 70V, 65W. |
General Electric Solid State |
| 24 |
BD243B |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 90V, 65W. |
General Electric Solid State |
| 25 |
BD243C |
Epitaxial-base silicon N-P-N VERSAWATT transistor. Vcer 115V, 65W. |
General Electric Solid State |
| 26 |
BD244 |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -55V, 65W. |
General Electric Solid State |
| 27 |
BD244A |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -70V, 65W. |
General Electric Solid State |
| 28 |
BD244A |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 60Vdc, Vcb = 60Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
| 29 |
BD244B |
Epitaxial-base silicon P-N-P VERSAWATT transistor. Vcer -90V, 65W. |
General Electric Solid State |
| 30 |
BD244B |
PNP silicon plastic power transistor. Designed for use in general-purpose switching and amplifier applications. Vceo = 80Vdc, Vcb = 80Vdc, Veb = 5Vdc Ic = 6Adc, PD = 65W. |
USHA India LTD |
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