| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N3155A |
Temperature-compensated silicon zener reference diode. Max voltage change 0.086 V. 500 W. |
Motorola |
| 2 |
1N3156 |
Temperature-compensated silicon zener reference diode. Max voltage change 0.026 V. 500 W. |
Motorola |
| 3 |
1N3822 |
Zener regulator diode. Nom zener voltage 3.6 V. 1 W. |
Motorola |
| 4 |
1N3827 |
Zener regulator diode. Nom zener voltage 5.6 V. 1 W. |
Motorola |
| 5 |
1N4729 |
1 W silicon zener diode. Nominal zener voltage 3.6 V. |
Fairchild Semiconductor |
| 6 |
1N4734 |
1 W silicon zener diode. Nominal zener voltage 5.6 V. |
Fairchild Semiconductor |
| 7 |
1N4776A |
Low-level temperature-compensated zener reference diode. Max voltage 0.066 V. |
Motorola |
| 8 |
1N4777A |
Low-level temperature-compensated zener reference diode. Max voltage 0.026 V. |
Motorola |
| 9 |
1N4778 |
Low-level temperature-compensated zener reference diode. Max voltage 0.006 V. |
Motorola |
| 10 |
1N4781A |
Low-level temperature-compensated zener reference diode. Max voltage 0.066 V. |
Motorola |
| 11 |
1N4782A |
Low-level temperature-compensated zener reference diode. Max voltage 0.026 V. |
Motorola |
| 12 |
1N4783 |
Low-level temperature-compensated zener reference diode. Max voltage 0.006 V. |
Motorola |
| 13 |
1N5227 |
500 mW silicon zener diode. Nominal zener voltage 3.6 V. |
Fairchild Semiconductor |
| 14 |
1N5227AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.6 V. Tolerance +-10%. |
Microsemi |
| 15 |
1N5227BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.6 V. Tolerance +-5%. |
Microsemi |
| 16 |
1N5227UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 3.6 V. |
Microsemi |
| 17 |
1N5232 |
500 mW silicon zener diode. Nominal zener voltage 5.6 V. |
Fairchild Semiconductor |
| 18 |
1N5232AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 5.6 V. Tolerance +-10%. |
Microsemi |
| 19 |
1N5232BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 5.6 V. Tolerance +-5%. |
Microsemi |
| 20 |
1N5232UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 5.6 V. |
Microsemi |
| 21 |
1N5246AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 16 V. Tolerance +-10%. |
Microsemi |
| 22 |
1N5246BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 16 V. Tolerance +-5%. |
Microsemi |
| 23 |
1N5246UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 16 V. |
Microsemi |
| 24 |
1N5258AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 36 V. Tolerance +-10%. |
Microsemi |
| 25 |
1N5258BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 36 V. Tolerance +-5%. |
Microsemi |
| 26 |
1N5258UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 36 V. |
Microsemi |
| 27 |
1N5263AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 56 V. Tolerance +-10%. |
Microsemi |
| 28 |
1N5263BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 56 V. Tolerance +-5%. |
Microsemi |
| 29 |
1N5263UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 56 V. |
Microsemi |
| 30 |
1N5519A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 3.6 V. Test current 20 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
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