No. |
Part Name |
Description |
Manufacturer |
1 |
AS7C1026-20BC |
5V/3.3V 64Kx6 CMOS SRAM |
Alliance Semiconductor |
2 |
AS7C31026-20BC |
5V/3.3V 64Kx6 CMOS SRAM |
Alliance Semiconductor |
3 |
AS7C31026-20BI |
5V/3.3V 64Kx6 CMOS SRAM |
Alliance Semiconductor |
4 |
BR246-20B1-6V-002L |
Relays |
Microsemi |
5 |
BR246-20B2-6V-005L |
Relays |
Microsemi |
6 |
BR246-20B3-6V-008L |
Relays |
Microsemi |
7 |
BZW06-20B |
TRANSILTM |
ST Microelectronics |
8 |
BZW06-20B |
Discrete Devices -Diode-TVS |
Taiwan Semiconductor |
9 |
IS61LV6416-20B |
64K x 16 high-speed CMOS static RAM with 3.3V supply |
Integrated Silicon Solution Inc |
10 |
IS61LV6416-20BI |
64K x 16 high-speed CMOS static RAM with 3.3V supply |
Integrated Silicon Solution Inc |
11 |
M28256-20BS1T |
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection |
ST Microelectronics |
12 |
M28256-20BS6T |
256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection |
ST Microelectronics |
13 |
M28C16-20BS6 |
16 Kbit 2Kb x8 Parallel EEPROM |
ST Microelectronics |
14 |
M28C256-20BS1T |
256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
ST Microelectronics |
15 |
M28C256-20BS6T |
256 Kbit (32Kb x8) Parallel EEPROM with Software Data Protection |
ST Microelectronics |
16 |
M28F256-20B1TR |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
ST Microelectronics |
17 |
M28F256-20B3TR |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
ST Microelectronics |
18 |
M28F256-20B6TR |
512 Kbit (64Kb x8 Bulk Erase)Flasxh Memory |
ST Microelectronics |
19 |
XC95216-20BG352C |
XC95216 In-System Programmable CPLD |
Xilinx |
20 |
XC95216-20BG352I |
XC95216 In-System Programmable CPLD |
Xilinx |
21 |
XC95216-20BQ352C |
In-system programmable CPLD. Speed 20ns pin-to-pin delay. |
Xilinx |
22 |
XC95216-20BQ352I |
In-system programmable CPLD. Speed 20ns pin-to-pin delay. |
Xilinx |
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