| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1.5KE110CA |
Transient voltage suppressor. 1500 W. Breakdown voltage 106.0 V(min), 116 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 2 |
1.5KE150C |
Transient voltage suppressor. 1500 W. Breakdown voltage 136.0 V(min), 165.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 3 |
1.5KE160C |
Transient voltage suppressor. 1500 W. Breakdown voltage 144.0 V(min), 176.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 4 |
1.5KE440C |
Transient voltage suppressor. 1500 W. Breakdown voltage 396.0 V(min), 484.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
| 5 |
15KP160 |
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/226.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 287 V @ Ipp = 52 A. |
Panjit International Inc |
| 6 |
15KP160C |
Glass passivated junction transient voltage suppressor. Vrwm = 160 V. Vbr(min/max) = 178/226.0 V @ It = 5.0 mA. Ir = 10 uA. Vc = 287 V @ Ipp = 52 A. |
Panjit International Inc |
| 7 |
15KP200A |
Glass passivated junction transient voltage suppressor. Vrwm = 200 V. Vbr(min/max) = 220/256.0 V @ It = 1.0 mA. Ir = 5 uA. Vc = 324 V @ Ipp = 46 A. |
Panjit International Inc |
| 8 |
15KP200CA |
Glass passivated junction transient voltage suppressor. Vrwm = 200 V. Vbr(min/max) = 220/256.0 V @ It = 1.0 mA. Ir = 5 uA. Vc = 324 V @ Ipp = 46 A. |
Panjit International Inc |
| 9 |
1768 |
T-1 3/4 subminiature, midget screw lamp. 6.0 volts, 0.20 amps. |
Gilway Technical Lamp |
| 10 |
1768L |
T-1 3/4 subminiature, midget screw lamp. 6.0 volts, 0.22 amps. |
Gilway Technical Lamp |
| 11 |
1N3655 |
Microwave S-band Mixer NF=8.3 to 6.0 dB |
Motorola |
| 12 |
1N3655A |
Microwave S-band Mixer NF=8.3 to 6.0 dB |
Motorola |
| 13 |
1N3655B |
Microwave S-band Mixer NF=8.3 to 6.0 dB |
Motorola |
| 14 |
1N4745 |
1 W silicon zener diode. Nominal zener voltage 16.0 V. |
Fairchild Semiconductor |
| 15 |
1N5233 |
500 mW silicon zener diode. Nominal zener voltage 6.0 V. |
Fairchild Semiconductor |
| 16 |
1N5233 |
500mW, 6.0 Volts Silicon Glass Zener Diode |
ITT Semiconductors |
| 17 |
1N5233AUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 6.0 V. Tolerance +-10%. |
Microsemi |
| 18 |
1N5233BUR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 6.0 V. Tolerance +-5%. |
Microsemi |
| 19 |
1N5233UR-1 |
Metallurgically bonded glass surface mount 500 mW zener. Nominal zener voltage 6.0 V. |
Microsemi |
| 20 |
1N5246 |
500 mW silicon zener diode. Nominal zener voltage 16.0 V. |
Fairchild Semiconductor |
| 21 |
1N5536 |
0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-20% tolerance. |
Jinan Gude Electronic Device |
| 22 |
1N5536A |
0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-10% tolerance. |
Jinan Gude Electronic Device |
| 23 |
1N5536B |
0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-5% tolerance. |
Jinan Gude Electronic Device |
| 24 |
1N5536C |
0.4 W, low voltage avalanche diode. Nominal zener voltage 16.0 V. Test current 1.0 mAdc. +-2% tolerance. |
Jinan Gude Electronic Device |
| 25 |
1N5944 |
1.5 W, silicon zener diode. Zener voltage 62 V. Test current 6.0 mA. +-20% tolerance. |
Jinan Gude Electronic Device |
| 26 |
1N5944A |
1.5 W, silicon zener diode. Zener voltage 62 V. Test current 6.0 mA. +-10% tolerance. |
Jinan Gude Electronic Device |
| 27 |
1N5944C |
1.5 W, silicon zener diode. Zener voltage 62 V. Test current 6.0 mA. +-2% tolerance. |
Jinan Gude Electronic Device |
| 28 |
1N5944D |
1.5 W, silicon zener diode. Zener voltage 62 V. Test current 6.0 mA. +-1% tolerance. |
Jinan Gude Electronic Device |
| 29 |
1N755 |
500 mW silicon linear diode. Max zener impedance 6.0 Ohm, max zener voltage 7.5 V (Iz 20mA). |
Fairchild Semiconductor |
| 30 |
1N966 |
500 mW silicon planar zener diode. Max zener voltage 16.0 V. |
Fairchild Semiconductor |
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