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Datasheets for 6.00

Datasheets found :: 284
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 1.5KE160A 136.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
2 1.5KE160CA 1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 136.00 V. Test current IT = 1 mA. Bytes
3 1.5KE180 146.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
4 1.5KE180C 1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 146.00 V. Test current IT = 1 mA. Bytes
5 1.5KE300A 256.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
6 1.5KE300CA 1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 256.00 V. Test current IT = 1 mA. Bytes
7 1.5KE440 356.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
8 1.5KE440A 376.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
9 1.5KE440C 1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 356.00 V. Test current IT = 1 mA. Bytes
10 1.5KE440CA 1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 376.00 V. Test current IT = 1 mA. Bytes
11 1N6388 36.00V; 23A ;1500W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
12 20KW216 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
13 20KW216A 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
14 20KW256 256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
15 20KW256A 256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
16 236.000 Axial Lead And Cartridge Fuses Littelfuse
17 2N3773 150.000W Power NPN Metal Can Transistor. 140V Vceo, 16.000A Ic, 5 hFE. Continental Device India Limited
18 2N4234 6.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 1.000A Ic, 40 hFE. Continental Device India Limited
19 2N4235 6.000W General Purpose PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 hFE. Continental Device India Limited
20 2N4236 6.000W General Purpose PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 hFE. Continental Device India Limited
21 2N4238 6.000W General Purpose NPN Metal Can Transistor. 60V Vceo, 1.000A Ic, 30 hFE. Continental Device India Limited
22 2N5294 36.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 4.000A Ic, 30 - 120 hFE. Continental Device India Limited
23 2N5296 36.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 30 - 120 hFE. Continental Device India Limited
24 2N5298 36.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 20 - 80 hFE. Continental Device India Limited
25 30KW156 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
26 30KW156A 156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
27 30KW216 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
28 30KW216A 216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
29 30R300 Resettable PTC. Ihold = 3.00A, Itrip = 6.00A, Vmax =30Vdc. Reel quantity 1500. Littelfuse
30 BD243 65.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 6.000A Ic, 30 hFE. Continental Device India Limited


Datasheets found :: 284
Page: | 1 | 2 | 3 | 4 | 5 |



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