No. |
Part Name |
Description |
Manufacturer |
1 |
1.5KE160A |
136.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
2 |
1.5KE160CA |
1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 136.00 V. Test current IT = 1 mA. |
Bytes |
3 |
1.5KE180 |
146.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
4 |
1.5KE180C |
1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 146.00 V. Test current IT = 1 mA. |
Bytes |
5 |
1.5KE300A |
256.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
6 |
1.5KE300CA |
1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 256.00 V. Test current IT = 1 mA. |
Bytes |
7 |
1.5KE440 |
356.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
8 |
1.5KE440A |
376.00V; 1mA ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
9 |
1.5KE440C |
1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 356.00 V. Test current IT = 1 mA. |
Bytes |
10 |
1.5KE440CA |
1500 Watt peak power transient voltage suppressor. Reverse stand-off voltage VRWM = 376.00 V. Test current IT = 1 mA. |
Bytes |
11 |
1N6388 |
36.00V; 23A ;1500W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
12 |
20KW216 |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
13 |
20KW216A |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
14 |
20KW256 |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
15 |
20KW256A |
256.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
16 |
236.000 |
Axial Lead And Cartridge Fuses |
Littelfuse |
17 |
2N3773 |
150.000W Power NPN Metal Can Transistor. 140V Vceo, 16.000A Ic, 5 hFE. |
Continental Device India Limited |
18 |
2N4234 |
6.000W General Purpose PNP Metal Can Transistor. 40V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
19 |
2N4235 |
6.000W General Purpose PNP Metal Can Transistor. 60V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
20 |
2N4236 |
6.000W General Purpose PNP Metal Can Transistor. 80V Vceo, 1.000A Ic, 40 hFE. |
Continental Device India Limited |
21 |
2N4238 |
6.000W General Purpose NPN Metal Can Transistor. 60V Vceo, 1.000A Ic, 30 hFE. |
Continental Device India Limited |
22 |
2N5294 |
36.000W Medium Power NPN Plastic Leaded Transistor. 70V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
23 |
2N5296 |
36.000W Medium Power NPN Plastic Leaded Transistor. 40V Vceo, 4.000A Ic, 30 - 120 hFE. |
Continental Device India Limited |
24 |
2N5298 |
36.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
25 |
30KW156 |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
26 |
30KW156A |
156.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
27 |
30KW216 |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
28 |
30KW216A |
216.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
29 |
30R300 |
Resettable PTC. Ihold = 3.00A, Itrip = 6.00A, Vmax =30Vdc. Reel quantity 1500. |
Littelfuse |
30 |
BD243 |
65.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 6.000A Ic, 30 hFE. |
Continental Device India Limited |
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