| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N270JTXV |
100 V, 60 mA, gold bonded germanium diode |
BKC International Electronics |
| 2 |
2N7002P |
60 V, 360 mA N-channel Trench MOSFET |
Nexperia |
| 3 |
2N7002P |
60 V, 360 mA N-channel Trench MOSFET |
NXP Semiconductors |
| 4 |
AQV217SX |
PhotoMOS relay, GU (general use) type [1-channel (form A ) type]. Output rating: load voltage 200V, load current 160 mA. Tape and reel packing style, picked from the 1/2/3-pin side. |
Matsushita Electric Works(Nais) |
| 5 |
AQV217SZ |
PhotoMOS relay, GU (general use) type [1-channel (form A ) type]. Output rating: load voltage 200 V, load current 160 mA. Tape and reel packing style, picked from the 4/5/6-pin side. |
Matsushita Electric Works(Nais) |
| 6 |
AQW217 |
PhotoMOS relay, GU (general use), 2-channel (form A) type. AC/DC type. Output rating: load voltage 200 V, load current 160 mA. Through hole terminal. Tube packing style. |
Matsushita Electric Works(Nais) |
| 7 |
AQW217A |
PhotoMOS relay, GU (general use), 2-channel (form A) type. AC/DC type. Output rating: load voltage 200 V, load current 160 mA. Surface-mount terminal. Tube packing style. |
Matsushita Electric Works(Nais) |
| 8 |
AQW217AX |
PhotoMOS relay, GU (general use), 2-channel (form A) type. AC/DC type. Output rating: load voltage 200 V, load current 160 mA. Surface-mount terminal. Tape and reel packing style. |
Matsushita Electric Works(Nais) |
| 9 |
AQW217AZ |
PhotoMOS relay, GU (general use), 2-channel (form A) type. AC/DC type. Output rating: load voltage 200 V, load current 160 mA. Surface-mount terminal. Tape and reel packing style. |
Matsushita Electric Works(Nais) |
| 10 |
B1160CA |
160 mA, battrax SLIC protector |
Teccor Electronics |
| 11 |
B1160CC |
160 mA, battrax SLIC protector |
Teccor Electronics |
| 12 |
B1161UA |
160 mA, battrax dual negative SLIC protector |
Teccor Electronics |
| 13 |
B1161UA4 |
160 mA, battrax quad negative SLIC protector |
Teccor Electronics |
| 14 |
B1161UC |
160 mA, battrax dual negative SLIC protector |
Teccor Electronics |
| 15 |
B1161UC4 |
160 mA, battrax quad negative SLIC protector |
Teccor Electronics |
| 16 |
B3164UA |
160 mA, battrax dual positive/negative SLIC protector |
Teccor Electronics |
| 17 |
B3164UC |
160 mA, battrax dual positive/negative SLIC protector |
Teccor Electronics |
| 18 |
BSS138BK |
60 V, 360 mA N-channel Trench MOSFET |
Nexperia |
| 19 |
BSS138BK |
60 V, 360 mA N-channel Trench MOSFET |
NXP Semiconductors |
| 20 |
BSS138P |
60 V, 360 mA N-channel Trench MOSFET |
Nexperia |
| 21 |
BSS138P |
60 V, 360 mA N-channel Trench MOSFET |
NXP Semiconductors |
| 22 |
BSS138PW |
60 V, 360 mA N-channel Trench MOSFET |
Nexperia |
| 23 |
BSS138PW |
60 V, 360 mA N-channel Trench MOSFET |
NXP Semiconductors |
| 24 |
BSS84AKS |
50 V, 160 mA dual P-channel Trench MOSFET |
Nexperia |
| 25 |
BSS84AKS |
50 V, 160 mA dual P-channel Trench MOSFET |
NXP Semiconductors |
| 26 |
CLED405 |
3 V, 60 mA, gallium aluminum arsenide infrared emitting diode |
Clairex Technologies |
| 27 |
EPM7160ELC84-10 |
Programmable logic , 160 macrocells, 10 logic array blocks, 64 I/O pins, 10ns |
Altera Corporation |
| 28 |
EPM7160ELC84-12 |
Programmable logic , 160 macrocells, 10 logic array blocks, 64 I/O pins, 12ns |
Altera Corporation |
| 29 |
EPM7160ELC84-15 |
Programmable logic , 160 macrocells, 10 logic array blocks, 64 I/O pins, 15ns |
Altera Corporation |
| 30 |
EPM7160ELC84-20 |
Programmable logic , 160 macrocells, 10 logic array blocks, 64 I/O pins, 20ns |
Altera Corporation |
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