No. |
Part Name |
Description |
Manufacturer |
1 |
1314AB60 |
60 W, 25 V, 1350-1400 MHz common emitter transistor |
GHz Technology |
2 |
1920AB60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
3 |
1920CD60 |
60 W, 25 V, 1930-1990 MHz common emitter transistor |
GHz Technology |
4 |
2N6282 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
5 |
2N6283 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
6 |
2N6284 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
7 |
2N6285 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 60 V(min). 160 W. |
General Electric Solid State |
8 |
2N6286 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 80 V(min). 160 W. |
General Electric Solid State |
9 |
2N6287 |
20 A complementary N-P-N and P-N-P monolithic darlington power transistor. High voltage rating 100 V(min). 160 W. |
General Electric Solid State |
10 |
2N6439 |
60 W,NPN silicon RF power transistor |
MA-Com |
11 |
2N6439 |
60 W, 225 to 400 MHz CONTROLLED �Q� BROADBAND RF POWER TRANSISTOR NPN SILICON |
Motorola |
12 |
2N6530 |
8 A N-P-N darlington power transistor. 80 V. 60 W. Gain of 1000 at 5 A. |
General Electric Solid State |
13 |
2N6531 |
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 500 at 3 A. |
General Electric Solid State |
14 |
2N6532 |
8 A N-P-N darlington power transistor. 100 V. 60 W. Gain of 1000 at 5 A. |
General Electric Solid State |
15 |
2N6533 |
8 A N-P-N darlington power transistor. 120 V. 60 W. Gain of 1000 at 3 A. |
General Electric Solid State |
16 |
BU326 |
800 V, 6 A, 60 W, NPN silicon power transistor |
Texas Instruments |
17 |
BU326A |
900 V, 6 A, 60 W, NPN silicon power transistor |
Texas Instruments |
18 |
BU406 |
7 AMPERES NPN SILICON POWER TRANSISTORS 60 WATTS 150 and 200 VOLTS |
Motorola |
19 |
BU406 |
400 V, 7 A, 60 W, NPN silicon power transistor |
Texas Instruments |
20 |
BU407 |
330 V, 7 A, 60 W, NPN silicon power transistor |
Texas Instruments |
21 |
BU806 |
8.0 AMPERE DARLINGTON NPN POWER TRANSISTORS 60 WATTS 200 VOLTS |
Motorola |
22 |
EB93 |
Application Note - 60 watt VHF amplifier uses splitting/combining techniques |
Motorola |
23 |
FDC60-12D3305 |
Input range:9-18 VDC;output voltage:3.3/5 VDC; output current:6/6 A;input current:5770 mA; 60 W DC-DC converter |
Power Mate Technology |
24 |
FDC60-24D3305 |
Input range:18-36 VDC;output voltage:3.3/5 VDC; output current:6/6 A;input current:2700 mA; 60 W DC-DC converter |
Power Mate Technology |
25 |
FDC60-48D3305 |
Input range:36-75 VDC;output voltage:3.3/5 VDC; output current:6/6 A;input current:1310 mA; 60 W DC-DC converter |
Power Mate Technology |
26 |
FX4400 |
High output xenon flashlamp. Window material borosilicate, average power 60 watts, voltage 400-1000 Volts. |
PerkinElmer Optoelectronics |
27 |
FX4401 |
High output xenon flashlamp. Window material UV glass, average power 60 watts, voltage 400-1000 Volts. |
PerkinElmer Optoelectronics |
28 |
FX4402 |
High output xenon flashlamp. Window material sapphire, average power 60 watts, voltage 400-1000 Volts. |
PerkinElmer Optoelectronics |
29 |
FX4403 |
High output xenon flashlamp. Window material ZnSe, average power 60 watts, voltage 400-1000 Volts. |
PerkinElmer Optoelectronics |
30 |
HAS040YE |
HAS SERIES - 60 WATT |
Power-One |
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