| No. |
Part Name |
Description |
Manufacturer |
| 1 |
MAFR-000688-000001 |
860-960 MHz Single-Junction Robust Lead Circulator |
Skyworks Solutions |
| 2 |
MW4IC915 |
MW4IC915MBR1, MW4IC915GMBR1 GSM/GSM EDGE, N-CDMA, W-CDMA, 860-960 MHz, 15 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers |
Motorola |
| 3 |
PTF080101 |
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ |
Infineon |
| 4 |
PTF080101S |
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ |
Infineon |
| 5 |
PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz |
Infineon |
| 6 |
PTF080601A |
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz |
Infineon |
| 7 |
PTF080601E |
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz |
Infineon |
| 8 |
PTF080601F |
LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz |
Infineon |
| 9 |
PTF10138 |
60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 10 |
PTF10139 |
60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 11 |
PTF10193 |
12 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
Ericsson Microelectronics |
| 12 |
SD1420-01 |
860-960MHz 2.1W 24V NPN RF transistor, designed for high Linearity Class AB operation for Cellular Base Station applications |
SGS Thomson Microelectronics |
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