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Datasheets for 60.0

Datasheets found :: 127
Page: | 1 | 2 | 3 | 4 | 5 |
No. Part Name Description Manufacturer
1 1.5KE400C Transient voltage suppressor. 1500 W. Breakdown voltage 360.0 V(min), 440.0 V(max). Test current 1.0 mA. Shanghai Sunrise Electronics
2 15KW160 160.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
3 15KW160A 160.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
4 15KW260 260.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
5 15KW260A 260.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
6 20KW160 160.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
7 20KW160A 160.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor MDE Semiconductor
8 5KP160 160.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
9 5KP160A 160.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications MDE Semiconductor
10 BD201 60.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 30 hFE. Complementary BD202 Continental Device India Limited
11 BD202 60.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 30 hFE. Complementary BD201 Continental Device India Limited
12 BD203 60.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 30 hFE. Complementary BD204 Continental Device India Limited
13 BD204 60.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 30 hFE. Complementary BD203 Continental Device India Limited
14 BU208D 60.000W General Purpose NPN Metal Can Transistor. 700V Vceo, 5.000A Ic, 2 hFE. Continental Device India Limited
15 BU407 60.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 7.000A Ic, hFE. Continental Device India Limited
16 BU508AF 60.000W Power NPN Plastic Leaded Transistor. 700V Vceo, 8.000A Ic, 2 hFE. Continental Device India Limited
17 BU508AT 60.000W Medium Power NPN Plastic Leaded Transistor. 700V Vceo, 8.000A Ic, hFE. Continental Device India Limited
18 BU508DF 60.000W Power NPN Plastic Leaded Transistor. 700V Vceo, 8.000A Ic, 2 hFE. Continental Device India Limited
19 BUF508A 60.000W Power NPN Plastic Leaded Transistor. 700V Vceo, 8.000A Ic, hFE. Continental Device India Limited
20 CD13005 60.000W General Purpose NPN Plastic Leaded Transistor. 400V Vceo, 2.000A Ic, 4 - 25 hFE Continental Device India Limited
21 CD13005A 60.000W General Purpose NPN Plastic Leaded Transistor. 400V Vceo, 2.000A Ic, 11 - 16 hFE Continental Device India Limited
22 CD13005B 60.000W General Purpose NPN Plastic Leaded Transistor. 400V Vceo, 2.000A Ic, 15 - 19 hFE Continental Device India Limited
23 CD13005C 60.000W General Purpose NPN Plastic Leaded Transistor. 400V Vceo, 2.000A Ic, 18 - 22 hFE Continental Device India Limited
24 CD13005E 60.000W General Purpose NPN Plastic Leaded Transistor. 400V Vceo, 2.000A Ic, 21 - 25 hFE Continental Device India Limited
25 CD13005F 60.000W General Purpose NPN Plastic Leaded Transistor. 400V Vceo, 2.000A Ic, 24 - 30 hFE Continental Device India Limited
26 CFB1342 60.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 500 hFE. Continental Device India Limited
27 CFB612 60.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 1000 hFE. Continental Device India Limited
28 CFB810 60.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 hFE. Continental Device India Limited
29 CFD1933A 60.000W Medium Power NPN Plastic Leaded Transistor. 110V Vceo, 6.000A Ic, 1000 hFE. Continental Device India Limited
30 CFD611 60.000W Medium Power NPN Plastic Leaded Transistor. 110V Vceo, 6.000A Ic, 1000 hFE. Continental Device India Limited


Datasheets found :: 127
Page: | 1 | 2 | 3 | 4 | 5 |



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