No. |
Part Name |
Description |
Manufacturer |
1 |
1.5KE400C |
Transient voltage suppressor. 1500 W. Breakdown voltage 360.0 V(min), 440.0 V(max). Test current 1.0 mA. |
Shanghai Sunrise Electronics |
2 |
15KW160 |
160.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
3 |
15KW160A |
160.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
4 |
15KW260 |
260.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
5 |
15KW260A |
260.0V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
6 |
20KW160 |
160.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
7 |
20KW160A |
160.00V; 5mA ;15000W peak pulse power; glass passivated junction transient voltage suppressor |
MDE Semiconductor |
8 |
5KP160 |
160.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
9 |
5KP160A |
160.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications |
MDE Semiconductor |
10 |
BD201 |
60.000W Medium Power NPN Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 30 hFE. Complementary BD202 |
Continental Device India Limited |
11 |
BD202 |
60.000W Medium Power PNP Plastic Leaded Transistor. 45V Vceo, 8.000A Ic, 30 hFE. Complementary BD201 |
Continental Device India Limited |
12 |
BD203 |
60.000W Medium Power NPN Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 30 hFE. Complementary BD204 |
Continental Device India Limited |
13 |
BD204 |
60.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 8.000A Ic, 30 hFE. Complementary BD203 |
Continental Device India Limited |
14 |
BU208D |
60.000W General Purpose NPN Metal Can Transistor. 700V Vceo, 5.000A Ic, 2 hFE. |
Continental Device India Limited |
15 |
BU407 |
60.000W Medium Power NPN Plastic Leaded Transistor. 150V Vceo, 7.000A Ic, hFE. |
Continental Device India Limited |
16 |
BU508AF |
60.000W Power NPN Plastic Leaded Transistor. 700V Vceo, 8.000A Ic, 2 hFE. |
Continental Device India Limited |
17 |
BU508AT |
60.000W Medium Power NPN Plastic Leaded Transistor. 700V Vceo, 8.000A Ic, hFE. |
Continental Device India Limited |
18 |
BU508DF |
60.000W Power NPN Plastic Leaded Transistor. 700V Vceo, 8.000A Ic, 2 hFE. |
Continental Device India Limited |
19 |
BUF508A |
60.000W Power NPN Plastic Leaded Transistor. 700V Vceo, 8.000A Ic, hFE. |
Continental Device India Limited |
20 |
CD13005 |
60.000W General Purpose NPN Plastic Leaded Transistor. 400V Vceo, 2.000A Ic, 4 - 25 hFE |
Continental Device India Limited |
21 |
CD13005A |
60.000W General Purpose NPN Plastic Leaded Transistor. 400V Vceo, 2.000A Ic, 11 - 16 hFE |
Continental Device India Limited |
22 |
CD13005B |
60.000W General Purpose NPN Plastic Leaded Transistor. 400V Vceo, 2.000A Ic, 15 - 19 hFE |
Continental Device India Limited |
23 |
CD13005C |
60.000W General Purpose NPN Plastic Leaded Transistor. 400V Vceo, 2.000A Ic, 18 - 22 hFE |
Continental Device India Limited |
24 |
CD13005E |
60.000W General Purpose NPN Plastic Leaded Transistor. 400V Vceo, 2.000A Ic, 21 - 25 hFE |
Continental Device India Limited |
25 |
CD13005F |
60.000W General Purpose NPN Plastic Leaded Transistor. 400V Vceo, 2.000A Ic, 24 - 30 hFE |
Continental Device India Limited |
26 |
CFB1342 |
60.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 500 hFE. |
Continental Device India Limited |
27 |
CFB612 |
60.000W Medium Power PNP Plastic Leaded Transistor. 120V Vceo, 6.000A Ic, 1000 hFE. |
Continental Device India Limited |
28 |
CFB810 |
60.000W Medium Power PNP Plastic Leaded Transistor. 110V Vceo, 8.000A Ic, 1000 hFE. |
Continental Device India Limited |
29 |
CFD1933A |
60.000W Medium Power NPN Plastic Leaded Transistor. 110V Vceo, 6.000A Ic, 1000 hFE. |
Continental Device India Limited |
30 |
CFD611 |
60.000W Medium Power NPN Plastic Leaded Transistor. 110V Vceo, 6.000A Ic, 1000 hFE. |
Continental Device India Limited |
| | | |