| No. |
Part Name |
Description |
Manufacturer |
| 1 |
0R6UXZ31 |
Silicon diffused junction high-voltage rectifier 14kV 600mA |
TOSHIBA |
| 2 |
1416-1 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 3 |
1416-3 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 4 |
2N2905A |
60V, 600mA PNP Small Signal Transistor - TO-39 |
ON Semiconductor |
| 5 |
2N2907A |
60V, 600mA PNP Small Signal Transistor - TO-18 |
ON Semiconductor |
| 6 |
2N4400 |
Planar epitaxial passivated NPN silicon transistor. 40V, 600mA. |
General Electric Solid State |
| 7 |
2N4401 |
Planar epitaxial passivated NPN silicon transistor. 40V, 600mA. |
General Electric Solid State |
| 8 |
2N4402 |
Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. |
General Electric Solid State |
| 9 |
2N4403 |
Planar epitaxial passivated PNP silicon transistor. -40V, -600mA. |
General Electric Solid State |
| 10 |
2SA1998 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -2A Ic, 150 to 500 hFE. |
Isahaya Electronics Corporation |
| 11 |
2SA2002 |
600mW Lead frame PNP transistor, maximum rating: -20V Vceo, -700mA Ic, 150 to 800 hFE. Complementary 2SC5485 |
Isahaya Electronics Corporation |
| 12 |
2SA954 |
Audio frequency amplifier. Collector-base voltage: Vcbo = -80V. Collector-emitter voltage: Vceo = -80V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 600mW. |
USHA India LTD |
| 13 |
2SC2001 |
Transistor. General purpose applications high total power disipation . Collector-base voltage Vcbo = 30V. Collector-emitter voltage Vceo = 25V. Emitter-base voltage Vebo = 5V. Collector dissipation Pc(max) = 600mW. Collector current Ic = 7 |
USHA India LTD |
| 14 |
2SC5486 |
600mW Lead frame NPN transistor, maximum rating: 10V Vceo, 5A Ic, 230 to 600 hFE. |
Isahaya Electronics Corporation |
| 15 |
2SC6046 |
200mW SMD NPN transistor, maximum rating: 40V Vceo, 600mA Ic, 100 to 300 hFE. |
Isahaya Electronics Corporation |
| 16 |
81416-012 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 17 |
81416-20 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 18 |
81416-6 |
Common base, silicon NPN bipolar device optimized for Class C, CW operation in the 1400-1600MHz |
SGS Thomson Microelectronics |
| 19 |
81600M |
High Power pulsed transistor designed for IFF avionics applications |
SGS Thomson Microelectronics |
| 20 |
AAT1106 |
600mA Step-Down Converter |
Skyworks Solutions |
| 21 |
AAT1106ICB-0.6-T1 |
600mA Step-Down Converter |
Skyworks Solutions |
| 22 |
AAT1126 |
600mA, 1MHz Step-Down Converter |
Skyworks Solutions |
| 23 |
AAT1126IGV-0.6-T1 |
600mA, 1MHz Step-Down Converter |
Skyworks Solutions |
| 24 |
AAT1141 |
Fast Transient 600mA Step-Down Converter |
Skyworks Solutions |
| 25 |
AAT1141ICB-0.6-T1 |
Fast Transient 600mA Step-Down Converter 0.6V to Vin, TSOT23-5 Package |
Skyworks Solutions |
| 26 |
AAT1141IGV-0.6-T1 |
Fast Transient 600mA Step-Down Converter 0.6V to Vin, SOT23-5 Package |
Skyworks Solutions |
| 27 |
AAT1141IGV-1.0-T1 |
Fast Transient 600mA Step-Down Converter 1.0V, SOT23-5 Package |
Skyworks Solutions |
| 28 |
AAT1141IGV-1.2-T1 |
Fast Transient 600mA Step-Down Converter 1.2V, SOT23-5 Package |
Skyworks Solutions |
| 29 |
AAT1141IGV-1.5-T1 |
Fast Transient 600mA Step-Down Converter 1.5V, SOT23-5 Package |
Skyworks Solutions |
| 30 |
AAT1141IGV-1.8-T1 |
Fast Transient 600mA Step-Down Converter 1.8V, SOT23-5 Package |
Skyworks Solutions |
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