Datasheets for 6030B

Datasheets found :: 45 Page: | 1 | 2 |

No.	Part Name	Description	Manufacturer
1	1N6030B	Zener Voltage Regulator Diode	Microsemi
2	1N6030B-1	Zener Voltage Regulator Diode	Microsemi
3	1N6030BUR-1	Zener Voltage Regulator Diode	Microsemi
4	1N6030BUR-1E3	Zener Voltage Regulator Diode	Microsemi
5	APT6030BN	POWER MOS IV 600V 22.0A 0.33 Ohm / 600V 23.0A 0.30 Ohm	Advanced Power Technology
6	APT6030BVFR	POWER MOS V 600V 21A 0.300 Ohm	Advanced Power Technology
7	APT6030BVFRG	FREDFETs	Microsemi
8	APT6030BVR	POWER MOS V 600V 21A 0.300 Ohm	Advanced Power Technology
9	APT6030BVRG	MOSFET	Microsemi
10	CDS1N6030BUR-1	Zener Voltage Regulator Diode	Microsemi
11	FDB6030BL	N-Channel Logic Level PowerTrench MOSFET	Fairchild Semiconductor
12	FDB6030BL_NL	N-Channel Logic Level PowerTrench MOSFET	Fairchild Semiconductor
13	FDD6030BL	30V N-Channel PowerTrench MOSFET	Fairchild Semiconductor
14	FDD6030BL_NL	30V N-Channel PowerTrench MOSFET	Fairchild Semiconductor
15	FDP6030BL	N-Channel Logic Level PowerTrench MOSFET	Fairchild Semiconductor
16	FDU6030BL	30V N-Channel PowerTrench MOSFET	Fairchild Semiconductor
17	KM44S16030BT-G_F10	100MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM	Samsung Electronic
18	KM44S16030BT-G_F8	125MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM	Samsung Electronic
19	KM44S16030BT-G_FH	100MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM	Samsung Electronic
20	KM44S16030BT-G_FL	100MHz; -1.0 to 4.6V; 1W; 50mA; 4M x 4-bit x 4 banks synchronous CMOS SDRAM	Samsung Electronic
21	KM48S16030B	4M x 8Bit x 4 Banks Synchronous DRAM LVTTL	Samsung Electronic
22	KM48S16030BT-G/F10	128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL	Samsung Electronic
23	KM48S16030BT-G/F8	128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL	Samsung Electronic
24	KM48S16030BT-G/FA	128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL	Samsung Electronic
25	KM48S16030BT-G/FH	128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL	Samsung Electronic
26	KM48S16030BT-G/FL	128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL	Samsung Electronic
27	M36W0R6030B0	64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package	ST Microelectronics
28	M36W0R6030B0ZAQ	64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package	ST Microelectronics
29	M36W0R6030B0ZAQT	64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package	ST Microelectronics
30	MAX6030BEUR	Precision, Low-Power, Low-Dropout, SOT23-3 Voltage References	MAXIM - Dallas Semiconductor

Datasheets found :: 45 Page: | 1 | 2 |