No. |
Part Name |
Description |
Manufacturer |
1 |
KM48S16030T-G/F10 |
4M x 8Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
2 |
KM48S16030T-G/F8 |
4M x 8Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
3 |
KM48S16030T-G/FH |
4M x 8Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
4 |
KM48S16030T-G/FL |
4M x 8Bit x 4 Banks Synchronous DRAM |
Samsung Electronic |
5 |
M36W0R6030T0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
ST Microelectronics |
6 |
M36W0R6030T0ZAQ |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
ST Microelectronics |
7 |
M36W0R6030T0ZAQT |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package |
ST Microelectronics |
8 |
MAX16030TG+ |
Dual-/Triple-/Quad-Voltage, Capacitor-Adjustable, Sequencing/Supervisory Circuits |
MAXIM - Dallas Semiconductor |
9 |
MAX16030TG+T |
Dual-/Triple-/Quad-Voltage, Capacitor-Adjustable, Sequencing/Supervisory Circuits |
MAXIM - Dallas Semiconductor |
10 |
W536030T |
MDPCM Voice/Melody w/64x32 ~ 40x16 LCD, 512x4x2 LCD RAM, 1/16&1/32 Duty, 1/4&1/5 Bias, 64Kx20 ROM, 1 |
Winbond Electronics |
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