No. |
Part Name |
Description |
Manufacturer |
1 |
1N6050 |
Transient Voltage Suppressor |
Microsemi |
2 |
1N6050 |
Diode TVS Single Bi-Dir 24V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
3 |
1N6050A |
Transient Voltage Suppressor |
Microsemi |
4 |
1N6050A |
Diode TVS Single Bi-Dir 25V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
5 |
1N6050AE3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
6 |
1N6050E3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
7 |
2N6050 |
DARLINGTON COMPLEMENTARY SILICON-POWER TRANSISTORS |
Boca Semiconductor Corporation |
8 |
2N6050 |
Leaded Power Transistor Darlington |
Central Semiconductor |
9 |
2N6050 |
60V power complementary silicon transistor |
Comset Semiconductors |
10 |
2N6050 |
12A P-N-P monolithic darlington power transistor. |
General Electric Solid State |
11 |
2N6050 |
POWER TRANSISTORS(12A,150W) |
MOSPEC Semiconductor |
12 |
2N6050 |
12A Darlington complementary silicon power PNP Transistor 150W |
Motorola |
13 |
2N6050 |
Trans Darlington PNP 60V 12A 3-Pin(2+Tab) TO-3 Sleeve |
New Jersey Semiconductor |
14 |
2N6050 |
Silicon epitaxial-base PNP power transistors in monolithic Darlington configuration |
SGS-ATES |
15 |
2N6050 |
Epitaxial-base darlington transistor for linear and switching applications |
SGS-ATES |
16 |
2N6050 |
Silicon Complementary Darlingtons Power Transistor, TO-3 Package CASE 280, complement 2N6057 |
Silicon Transistor Corporation |
17 |
2N6057 |
Silicon Complementary Darlingtons Power Transistor, TO-3 Package CASE 280, complement 2N6050 |
Silicon Transistor Corporation |
18 |
2SC6050 |
Silicon NPN epitaxial planar type |
Panasonic |
19 |
5962-9760501Q2A |
HEX INVERTERS |
Texas Instruments |
20 |
5962-9760501QCA |
HEX INVERTERS |
Texas Instruments |
21 |
5962-9760501QDA |
HEX INVERTERS |
Texas Instruments |
22 |
5962-9860501QKA |
8-Bit Dual Supply Translating Transceiver with 3-STATE Outputs |
National Semiconductor |
23 |
5962-9860501QLA |
8-Bit Dual Supply Translating Transceiver with 3-STATE Outputs |
National Semiconductor |
24 |
AT-60500 |
Up to 6GHz Low Noise NPN Silicon Bipolar Transistor Chip |
AVANTEK |
25 |
C960501 |
X Band Transmitter |
Microsemi |
26 |
C960503 |
X Band Transmitter |
Microsemi |
27 |
CGHV96050F1 |
50W, 7.9 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT |
Wolfspeed |
28 |
CGHV96050F2 |
50W, 7.9 - 9.6 GHz, 50-ohm, Input/Output-Matched GaN HEMT |
Wolfspeed |
29 |
DB2460500L |
Schottky Barrier Diodes |
Panasonic |
30 |
DMP6050SFG |
60V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI � |
Diodes |
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