| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N6070 |
Transient Voltage Suppressor |
Microsemi |
| 2 |
1N6070 |
Diode TVS Single Bi-Dir 155V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 3 |
1N6070A |
Transient Voltage Suppressor |
Microsemi |
| 4 |
1N6070A |
Diode TVS Single Bi-Dir 160V 1.5KW 2-Pin DO-13 |
New Jersey Semiconductor |
| 5 |
1N6070AE3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 6 |
1N6070E3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 7 |
5962-88607013A |
16-Bit Shift Registers |
Texas Instruments |
| 8 |
5962-8860701JA |
16-Bit Shift Registers |
Texas Instruments |
| 9 |
5962-8860701KA |
16-Bit Shift Registers |
Texas Instruments |
| 10 |
5962-9160701M2A |
8-Bit Universal Shift/Storage Register with Synchronous Reset and Common I/O Pins |
National Semiconductor |
| 11 |
5962-9160701M2A(54ACT323LMQB) |
8-Bit Universal Shift/Storage Register with Synchronous Reset and Common I/O Pins |
National Semiconductor |
| 12 |
5962-9160701M2A(54ACT323LMQB) |
8-Bit Universal Shift/Storage Register with Synchronous Reset and Common I/O Pins |
National Semiconductor |
| 13 |
5962-9160701MRA |
8-Bit Universal Shift/Storage Register with Synchronous Reset and Common I/O Pins |
National Semiconductor |
| 14 |
5962-9160701MRA(54ACT323DMQB) |
8-Bit Universal Shift/Storage Register with Synchronous Reset and Common I/O Pins |
National Semiconductor |
| 15 |
5962-9160701MRA(54ACT323DMQB) |
8-Bit Universal Shift/Storage Register with Synchronous Reset and Common I/O Pins |
National Semiconductor |
| 16 |
5962-9160701MSA |
8-Bit Universal Shift/Storage Register with Synchronous Reset and Common I/O Pins |
National Semiconductor |
| 17 |
5962-9160701MSA(54ACT323FMQB) |
8-Bit Universal Shift/Storage Register with Synchronous Reset and Common I/O Pins |
National Semiconductor |
| 18 |
5962-9160701MSA(54ACT323FMQB) |
8-Bit Universal Shift/Storage Register with Synchronous Reset and Common I/O Pins |
National Semiconductor |
| 19 |
5962D9960701QUA |
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 20 |
5962D9960701QUC |
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 21 |
5962D9960701QUX |
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 22 |
5962D9960701QXA |
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 23 |
5962D9960701QXC |
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish gold. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 24 |
5962D9960701QXX |
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class Q. Lead finish factory option. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 25 |
5962D9960701TUA |
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 26 |
5962D9960701TUC |
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 27 |
5962D9960701TUX |
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 28 |
5962D9960701TXA |
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish hot solder dipped. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 29 |
5962D9960701TXC |
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish gold. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
| 30 |
5962D9960701TXX |
512K x 8 SRAM: SMD. 25ns access time, 3.3V operation. Class T. Lead finish factory option. Total dose 1E4(10krad)(Si) |
Aeroflex Circuit Technology |
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