| No. |
Part Name |
Description |
Manufacturer |
| 1 |
K4E160811D |
2M x 8Bit CMOS Dynamic RAM with Extended Data Out |
Samsung Electronic |
| 2 |
K4E160811D-B |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 3 |
K4E160811D-F |
2M x 8 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 4 |
K4E660811D, K4E640811D |
8M x 8bit CMOS Dynamic RAM with Extended Data Out Data Sheet |
Samsung Electronic |
| 5 |
K4F160811D |
2M x 8Bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 6 |
K4F160811D-B |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 7 |
K4F160811D-F |
2M x 8 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle. |
Samsung Electronic |
| 8 |
K4F660811B |
8M x 8bit CMOS Dynamic RAM with Fast Page Mode |
Samsung Electronic |
| 9 |
K4F660811B-JC-45 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns |
Samsung Electronic |
| 10 |
K4F660811B-JC-50 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 11 |
K4F660811B-JC-60 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 12 |
K4F660811B-TC-45 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 45ns |
Samsung Electronic |
| 13 |
K4F660811B-TC-50 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 50ns |
Samsung Electronic |
| 14 |
K4F660811B-TC-60 |
8M x 8bit CMOS dynamic RAM with fast page mode, 5V, 60ns |
Samsung Electronic |
| 15 |
K4F660811D, K4F640811D |
8M x 8bit CMOS Dynamic RAM with Fast Page Mode Data Sheet |
Samsung Electronic |
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