No. |
Part Name |
Description |
Manufacturer |
1 |
ASM3P2760AF-06OR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
2 |
ASM3P2760AF-08SR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
3 |
ASM3P2760AF-08ST |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
4 |
ASM3P2760AF-08TR |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
5 |
ASM3P2760AF-08TT |
3.3 V, 6 MHz to 12 MHz, low power peak EMI reduction solution |
Alliance Semiconductor |
6 |
HYB18T1G160AF-3 |
1 Gbit DDR2 SDRAM |
Infineon |
7 |
HYB18T1G160AF-3.7 |
1Gbit Double Data Rate 2 (DDR2) Components |
Infineon |
8 |
HYB18T1G160AF-37 |
1 Gbit DDR2 SDRAM |
Infineon |
9 |
HYB18T1G160AF-3S |
1 Gbit DDR2 SDRAM |
Infineon |
10 |
HYB18T1G160AF-5 |
1Gbit Double Data Rate 2 (DDR2) Components |
Infineon |
11 |
HYB18T256160AF-3 |
256 Mbi t DDR2 SDRAM |
Infineon |
12 |
HYB18T256160AF-37 |
256 Mbi t DDR2 SDRAM |
Infineon |
13 |
HYB18T256160AF-5 |
256 Mbi t DDR2 SDRAM |
Infineon |
14 |
HYB18T512160AF-3.7 |
512Mbit Double Data Rate (DDR2) Component |
Infineon |
15 |
HYB18T512160AF-37 |
512-Mbit Double-Data-Rate-Two SDRAM |
Infineon |
16 |
HYB18T512160AF-5 |
512Mbit Double Data Rate (DDR2) Component |
Infineon |
17 |
HYB25L256160AF-7.5 |
Very low Power SDRAM optimized for battery-powered, handheld applications |
Infineon |
18 |
HYB25L256160AF-75 |
256MBit Mobile-RAM |
Infineon |
19 |
HYE25L256160AF-7.5 |
Very low Power SDRAM optimized for battery-powered, handheld applications |
Infineon |
20 |
HYE25L256160AF-75 |
256MBit Mobile-RAM |
Infineon |
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