No. |
Part Name |
Description |
Manufacturer |
1 |
HM514260AJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
2 |
HM514260AJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
3 |
HM514260AJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
4 |
HM51S4260AJ-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
5 |
HM51S4260AJ-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
6 |
HM51S4260AJ-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
7 |
NN5118160AJ-50 |
CMOS 1M x 16BIT DYNAMIC RAM |
etc |
8 |
NN5118160AJ-60 |
CMOS 1M x 16BIT DYNAMIC RAM |
etc |
9 |
NN5118160AJ-70 |
CMOS 1M x 16BIT DYNAMIC RAM |
etc |
10 |
VND5160AJ-E |
Double channel high side driver with analog current sense for automotive applications |
ST Microelectronics |
11 |
VND5E160AJ-E |
Double channel high side driver with analog current sense for automotive applications |
ST Microelectronics |
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