| No. |
Part Name |
Description |
Manufacturer |
| 1 |
CEB4060ALR |
N-channel enhancement mode field effect transistor |
Chino-Excel Technology |
| 2 |
CEP4060ALR |
N-channel enhancement mode field effect transistor |
Chino-Excel Technology |
| 3 |
HM514260ALRR-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 4 |
HM514260ALRR-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 5 |
HM514260ALRR-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 6 |
HM51S4260ALRR-10 |
100ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 7 |
HM51S4260ALRR-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 8 |
HM51S4260ALRR-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 9 |
NN5118160ALRR-50 |
CMOS 1M x 16BIT DYNAMIC RAM |
etc |
| 10 |
NN5118160ALRR-60 |
CMOS 1M x 16BIT DYNAMIC RAM |
etc |
| 11 |
NN5118160ALRR-70 |
CMOS 1M x 16BIT DYNAMIC RAM |
etc |
| | | |
