| No. |
Part Name |
Description |
Manufacturer |
| 1 |
IDT49C460BJ |
32-BIT CMOS ERROR DETECTION AND CORRECTION UNIT |
IDT |
| 2 |
IDT49C460BJB |
32-BIT CMOS ERROR DETECTION AND CORRECTION UNIT |
IDT |
| 3 |
IP1060BJ |
Switched Mode PSU Control Circuit |
SemeLAB |
| 4 |
LH28F160BJHE-TTL90 |
Flash Memory 16M (1M x 16/2M x 8) |
SHARP |
| 5 |
M5M465160BJ |
FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 6 |
M5M465160BJ-5 |
FAST PAGE MODE 67108864-BIT DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 7 |
M5M465160BJ-5S |
FAST PAGE MODE 67108864-BIT DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 8 |
M5M465160BJ-6 |
FAST PAGE MODE 67108864-BIT DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 9 |
M5M465160BJ-6S |
FAST PAGE MODE 67108864-BIT DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 10 |
NN5118160BJ-40 |
CMOS 1M x 16BIT DYNAMIC RAM |
etc |
| 11 |
NN5118160BJ-50 |
CMOS 1M x 16BIT DYNAMIC RAM |
etc |
| 12 |
NN5118160BJ-60 |
CMOS 1M x 16BIT DYNAMIC RAM |
etc |
| 13 |
STG4160BJR |
Low voltage 0.5 Ohm single SPDT switch with break-before-make feature and 15 kV ESD protection |
ST Microelectronics |
| 14 |
STG4260BJR |
Low voltage 0.5 Ω dual SPDT switch with break-before-make feature and 15 kV ESD protection |
ST Microelectronics |
| 15 |
TC514260BJ-70 |
70ns; V(in/out): -1 to +7V; 700mW; 50mA; 262,144 word x 16 bit dynamic RAM |
TOSHIBA |
| 16 |
TC514260BJ-80 |
80ns; V(in/out): -1 to +7V; 700mW; 50mA; 262,144 word x 16 bit dynamic RAM |
TOSHIBA |
| | | |
