| No. |
Part Name |
Description |
Manufacturer |
| 1 |
60CTT015 |
15V 60A Trench Schottky Discrete Diode in a TO-220 package |
International Rectifier |
| 2 |
60CTTN015 |
15V 60A Trench Schottky Discrete Diode in a TO-220 package |
International Rectifier |
| 3 |
HM514260CTT-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 4 |
HM514260CTT-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 5 |
HM514260CTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 6 |
HM514260CTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 7 |
HM51S4260CTT-6 |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 8 |
HM51S4260CTT-6R |
60ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 9 |
HM51S4260CTT-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 10 |
HM51S4260CTT-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 11 |
MBRB2060CTT4 |
20A 60V Schottky Rectifier |
ON Semiconductor |
| 12 |
MBRD660CTT4 |
6A 60V Schottky Rectifier |
ON Semiconductor |
| 13 |
MURB1660CTT4 |
16A 600V Ultrafast Rectifier |
ON Semiconductor |
| 14 |
MURHB860CTT4 |
8A 600V Ultrafast Rectifier |
ON Semiconductor |
| | | |
