| No. |
Part Name |
Description |
Manufacturer |
| 1 |
FERD20U60DJF-TR |
Field Effect Rectifier |
ST Microelectronics |
| 2 |
HM514260DJI-7 |
70ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 3 |
HM514260DJI-8 |
80ns; V(cc): -1.0 to +7.0V; 50mA; 1W; 262,144-word x 16-bit dynami� random access memory |
Hitachi Semiconductor |
| 4 |
IDT49C460DJ |
32-BIT CMOS ERROR DETECTION AND CORRECTION UNIT |
IDT |
| 5 |
IDT49C460DJB |
32-BIT CMOS ERROR DETECTION AND CORRECTION UNIT |
IDT |
| 6 |
M5M465160DJ |
FAST PAGE MODE 67108864-BIT (16777216-WORD BY 4-BIT) DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 7 |
M5M465160DJ-5 |
FAST PAGE MODE 67108864-BIT DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 8 |
M5M465160DJ-5S |
FAST PAGE MODE 67108864-BIT DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 9 |
M5M465160DJ-6 |
FAST PAGE MODE 67108864-BIT DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 10 |
M5M465160DJ-6S |
FAST PAGE MODE 67108864-BIT DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 11 |
Si7660DJ |
Switched-Capacitor Voltage Converter |
Siliconix |
| 12 |
STPS30M60DJF |
High efficiency power Schottky diode |
ST Microelectronics |
| 13 |
STPS30M60DJF-TR |
High efficiency power Schottky diode |
ST Microelectronics |
| 14 |
TMS416400-60DJ |
4194304-Word By 4-Bit High-Speed DRAMS |
Texas Instruments |
| 15 |
TMS417400-60DJ |
4194304-Word By 4-Bit High-Speed DRAMS |
Texas Instruments |
| 16 |
TMS417400A-60DJ |
4 194 304-WORD BY 4-BIT PAGE-MODE DRAM |
Texas Instruments |
| 17 |
TMS417409A-60DJ |
4 194 304-WORD BY 4-BIT EXTENDED DATA OUT DRAMS |
Texas Instruments |
| 18 |
TMS44100-60DJ |
4194304-Word By 1-Bit Dynamic Random-Access Memories |
Texas Instruments |
| 19 |
TMS44400-60DJ |
1048576 by 4-bit dynamic random-access memory, 60ns |
Texas Instruments |
| 20 |
TMS44400P-60DJ |
1048576 by 4-bit dynamic random-access memory, 60ns |
Texas Instruments |
| 21 |
TMS44409-60DJ |
1 048 576-Word By 4-Bit DRAM |
Texas Instruments |
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