| No. |
Part Name |
Description |
Manufacturer |
| 1 |
RM60DZ-24 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 2 |
RM60DZ-24 |
DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 3 |
RM60DZ-2H |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V |
Mitsubishi Electric Corporation |
| 4 |
RM60DZ-2H |
DIODE MODULES HIGH VOLTAGE MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 5 |
RM60DZ-H |
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 6 |
RM60DZ-M |
DIODE MODULES MEDIUM POWER GENERAL USE INSULATED TYPE |
Mitsubishi Electric Corporation |
| 7 |
TMS417800A-60DZ |
2 097 152-WORD BY 8-BIT PAGE-MODE DRAM |
Texas Instruments |
| 8 |
TMS417809A-60DZ |
2 097 152-Word By 8-Bit High-Speed DRAMS |
Texas Instruments |
| 9 |
TMS418160-60DZ |
1 048 576-Word By 16-Bit High-Speed DRAMS |
Texas Instruments |
| 10 |
TMS418160-60DZR |
1 048 576-Word By 16-Bit High-Speed DRAMS |
Texas Instruments |
| 11 |
TMS418160A-60DZ |
1048576 by 16 bit dynamic random-access memory, single 5-V power supply, 1024-cycle refresh in 16 ms, 60 ns |
Texas Instruments |
| 12 |
TMS418160A-60DZR |
1 048 576-WORD BY 16-BIT PAGE-MODE DRAM |
Texas Instruments |
| 13 |
TMS418169-60DZ |
1 048 576-Word By 16-Bit Extended Data Out High-Speed DRAMS |
Texas Instruments |
| 14 |
TMS418169A-60DZ |
1 048 576-WORD BY 16-BIT EXTENDED DATA OUT DRAM |
Texas Instruments |
| 15 |
TMS418169A-60DZR |
1 048 576-WORD BY 16-BIT EXTENDED DATA OUT DRAM |
Texas Instruments |
| 16 |
TMS45160-60DZ |
262 144-Word By 16-Bit High-Speed Dynamic Random-Access Memories |
Texas Instruments |
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