| No. |
Part Name |
Description |
Manufacturer |
| 1 |
CEB60N10 |
N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
| 2 |
CEP60N10 |
N-Channel Enhancement Mode Field Effect Transistor |
Chino-Excel Technology |
| 3 |
FGL60N100BNTD |
1000V, 60A NPT-Trench IGBT |
Fairchild Semiconductor |
| 4 |
FGL60N100BNTDTU |
1000V, 60A NPT-Trench IGBT |
Fairchild Semiconductor |
| 5 |
FGL60N100D |
IGBT |
Fairchild Semiconductor |
| 6 |
FGL60N100DTU |
Copak Discrete IGBT |
Fairchild Semiconductor |
| 7 |
OM60N10NK |
100V Single N-Channel Hi-Rel MOSFET in a TO-204AE package |
International Rectifier |
| 8 |
OM60N10S |
LOW VOLTAGE, LOW RDS(on) POWER MOSFETS IN HERMETIC ISOLATED PACKAGE |
Omnirel |
| 9 |
OM60N10SC |
100V Single N-Channel Hi-Rel MOSFET in a TO-258AA package |
International Rectifier |
| 10 |
OM60N10SCP |
100V Single N-Channel Hi-Rel MOSFET in a TO-258AA package |
International Rectifier |
| 11 |
OM60N10SCT |
100V Single N-Channel Hi-Rel MOSFET in a TO-258AA package |
International Rectifier |
| 12 |
R1160N101A |
SOT23-5 3-MODE 200mA LDO REGULATOR |
Ricoh |
| 13 |
R1160N101A-TR |
SOT23-5 3-MODE 200mA LDO REGULATOR |
Ricoh |
| 14 |
R1160N101B |
SOT23-5 3-MODE 200mA LDO REGULATOR |
Ricoh |
| 15 |
R1160N101B-TR |
SOT23-5 3-MODE 200mA LDO REGULATOR |
Ricoh |
| 16 |
STH60N10 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 17 |
STH60N10FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 18 |
STH60N10FI |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 19 |
STH60N10FI |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 20 |
STL60N10F7 |
N-channel 100 V, 0.013 Ohm typ., 12 A, STripFET(TM) VII DeepGATE(TM) Power MOSFET in a PowerFLAT(TM) 5x6 package |
ST Microelectronics |
| 21 |
STW60N10 |
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR |
SGS Thomson Microelectronics |
| 22 |
STW60N10 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
SGS Thomson Microelectronics |
| 23 |
STW60N10 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN |
ST Microelectronics |
| 24 |
SUM60N10-17 |
N-Channel 100-V (D-S) 175C MOSFET |
Vishay |
| 25 |
SUP60N10-16L |
N-Channel 100-V (D-S) 175C MOSFET |
Vishay |
| 26 |
TSG60N100CE |
Discrete Devices-IGBT-IGBT |
Taiwan Semiconductor |
| 27 |
TSM160N10CZ |
Discrete Devices-MOSFET-Single N-Channel |
Taiwan Semiconductor |
| | | |
