| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AOK60N30L |
Single MV MOSFETs (40V - 400V) |
Alpha & Omega Semiconductor |
| 2 |
GT60N321 |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation |
TOSHIBA |
| 3 |
M27C1001-60N3TR |
1 Mbit 128Kb x8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 4 |
M27C1001-60N3X |
1 Mbit 128Kb x8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 5 |
M27C256B-60N3 |
256 Kbit (32Kb x 8) EPROM, 5V, 60ns |
SGS Thomson Microelectronics |
| 6 |
M27C256B-60N3TR |
256 Kbit (32Kb x 8) EPROM, 5V, 60ns |
SGS Thomson Microelectronics |
| 7 |
M27C256B-60N3TR |
256 Kbit (32Kb x 8) UV EPROM and OTP EPROM |
ST Microelectronics |
| 8 |
M27C256B-60N3X |
256 Kbit (32Kb x 8) UV EPROM and OTP EPROM |
ST Microelectronics |
| 9 |
M27C512-60N3 |
512 Kbit (64Kb x 8) EPROM, 5V, 60ns |
SGS Thomson Microelectronics |
| 10 |
M27C512-60N3 |
512 Kbit (64K x8) UV EPROM and OTP EPROM |
ST Microelectronics |
| 11 |
M27C512-60N3TR |
512 Kbit (64Kb x 8) EPROM, 5V, 60ns |
SGS Thomson Microelectronics |
| 12 |
M27C512-60N3TR |
512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 13 |
M27C512-60N3X |
512 Kbit 64Kb x8 UV EPROM and OTP EPROM |
ST Microelectronics |
| 14 |
NDF60N360U1 |
N-Channel Power MOSFET, 600 V, 360 mOhm |
ON Semiconductor |
| 15 |
R1160N331A |
SOT23-5 3-MODE 200mA LDO REGULATOR |
Ricoh |
| 16 |
R1160N331A-TR |
SOT23-5 3-MODE 200mA LDO REGULATOR |
Ricoh |
| 17 |
R1160N331B |
SOT23-5 3-MODE 200mA LDO REGULATOR |
Ricoh |
| 18 |
R1160N331B-TR |
SOT23-5 3-MODE 200mA LDO REGULATOR |
Ricoh |
| 19 |
SN74AS760N3 |
Octal Buffers/Line Drivers With Open-Collector Outputs |
Texas Instruments |
| 20 |
SN74S260N3 |
Dual 5-input positive-NOR gates |
Texas Instruments |
| 21 |
STD60N3LH5 |
N-channel 30 V, 0.0072 Ohm typ., 48 A STripFET(TM) V Power MOSFET in DPAK package |
ST Microelectronics |
| 22 |
STL160N3LLH6 |
N-channel 30 V, 0.0011 Ohm typ., 45 A STripFET(TM) H6 Power MOSFET in a PowerFLAT(TM) 5x6 package |
ST Microelectronics |
| 23 |
STL260N3LLH6 |
N-channel 30 V, 0.0011 Ohm typ., 260 A STripFET H6 Power MOSFET in a PowerFLAT 5x6 package |
ST Microelectronics |
| 24 |
STL60N32N3LL |
Dual N-channel 30 V, 0.005 Ohm, 15 A PowerFLAT(TM) 5x6 asymmetrical double island, STripFET(TM) Power MOSFET |
ST Microelectronics |
| 25 |
STL60N3LLH5 |
N-channel 30 V, 0.0063 Ohm, 17 A PowerFLAT(TM) 5x6 STripFET(TM) V Power MOSFET |
ST Microelectronics |
| 26 |
STP160N3LL |
N-channel 30 V, 0.0024 Ohm typ., 160 A, STripFET(TM) VII DeepGATE(TM) Power MOSFET in a TO-220 package |
ST Microelectronics |
| 27 |
T860N3000 |
Mains Frequency Thyristor |
IPRS Baneasa |
| 28 |
T860N3200 |
Mains Frequency Thyristor |
IPRS Baneasa |
| 29 |
T860N3400 |
Mains Frequency Thyristor |
IPRS Baneasa |
| 30 |
T860N3600 |
Mains Frequency Thyristor |
IPRS Baneasa |
| | | |
