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Datasheets found :: 3
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| 1 |
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| No. | Part Name | Description | Manufacturer |
|---|---|---|---|
| 1 | GT60N321 | Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications The 4th Generation | TOSHIBA |
| 2 | STL60N32N3LL | Dual N-channel 30 V, 0.005 Ohm, 15 A PowerFLAT(TM) 5x6 asymmetrical double island, STripFET(TM) Power MOSFET | ST Microelectronics |
| 3 | T860N3200 | Mains Frequency Thyristor | IPRS Baneasa |
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Datasheets found :: 3
Page:
| 1 |
|