No. |
Part Name |
Description |
Manufacturer |
1 |
AN966 |
L6561, ENHANCED TRANSITION MODE POWER FACTOR CORRECTOR |
SGS Thomson Microelectronics |
2 |
KM416L8031BT-F0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10ns. |
Samsung Electronic |
3 |
KM416L8031BT-FY |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5ns. |
Samsung Electronic |
4 |
KM416L8031BT-FZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5ns. |
Samsung Electronic |
5 |
KM416L8031BT-G0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10ns. |
Samsung Electronic |
6 |
KM416L8031BT-GY |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
7 |
KM416L8031BT-GZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
8 |
KM44L32031BT-F0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10 ns. |
Samsung Electronic |
9 |
KM44L32031BT-FY |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
10 |
KM44L32031BT-FZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
11 |
KM44L32031BT-G0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10 ns. |
Samsung Electronic |
12 |
KM44L32031BT-GY |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
13 |
KM44L32031BT-GZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
14 |
KM48L16031BT-F0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10 ns. |
Samsung Electronic |
15 |
KM48L16031BT-FY |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
16 |
KM48L16031BT-FZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
17 |
KM48L16031BT-G0 |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10 ns. |
Samsung Electronic |
18 |
KM48L16031BT-GY |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
19 |
KM48L16031BT-GZ |
128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. |
Samsung Electronic |
20 |
MAX2361EVKIT# |
Evaluation Kit for the MAX2361, MAX2363, MAX2365 |
MAXIM - Dallas Semiconductor |
21 |
MAX2660EVKIT+ |
Evaluation Kit for the MAX2660, MAX2661, MAX2663, MAX2671 |
MAXIM - Dallas Semiconductor |
22 |
MAX2661EVKIT+ |
Evaluation Kit for the MAX2660, MAX2661, MAX2663, MAX2671 |
MAXIM - Dallas Semiconductor |
23 |
MAX2671EVKIT+ |
Evaluation Kit for the MAX2660, MAX2661, MAX2663, MAX2671 |
MAXIM - Dallas Semiconductor |
24 |
MAX4174BLEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 60, 1+ (Rf/Dg) noninverting gain 61, -3dB BW 310kHz. |
MAXIM - Dallas Semiconductor |
25 |
MAX4175BLEUK-T |
Single, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 60, 1+ (Rf/Dg) noninverting gain 61, -3dB BW 310kHz. |
MAXIM - Dallas Semiconductor |
26 |
MAX4274BLESA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 60, 1+ (Rf/Dg) noninverting gain 61, -3dB BW 310kHz. |
MAXIM - Dallas Semiconductor |
27 |
MAX4274BLEUA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 60, 1+ (Rf/Dg) noninverting gain 61, -3dB BW 310kHz. |
MAXIM - Dallas Semiconductor |
28 |
MAX4275BLESA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 60, 1+ (Rf/Dg) noninverting gain 61, -3dB BW 310kHz. |
MAXIM - Dallas Semiconductor |
29 |
MAX4275BLEUA |
Dual, Rail-to-Rail, GainAmp op amp with precision internal gain-setting resistors. Rf/Rg inverting gain 60, 1+ (Rf/Dg) noninverting gain 61, -3dB BW 310kHz. |
MAXIM - Dallas Semiconductor |
30 |
MAX9060EVKIT |
Evaluation Kits for the MAX9060, MAX9061, MAX9062, MAX9063, MAX9064, and MAX9065 |
MAXIM - Dallas Semiconductor |
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