No. |
Part Name |
Description |
Manufacturer |
1 |
1N6109 |
Transient Voltage Suppressor |
Microsemi |
2 |
1N6109 |
Diode TVS Single Bi-Dir 9.9V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
3 |
1N6109 |
500W BI-POLARITY TRANSIENT VOLTAGE SUPPRESSORS |
Semtech |
4 |
1N6109A |
Transient Voltage Suppressor |
Microsemi |
5 |
1N6109A |
Diode TVS Single Bi-Dir 9.9V 500W 2-Pin |
New Jersey Semiconductor |
6 |
1N6109A |
QPL 500 Watt Axial Leaded TVS |
Semtech |
7 |
1N6109Ae3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
8 |
1N6109AUS |
Transient Voltage Suppressor |
Microsemi |
9 |
1N6109AUSe3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
10 |
1N6109e3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
11 |
1N6109US |
Transient Voltage Suppressor |
Microsemi |
12 |
1N6109USe3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
13 |
2N5492 |
NPN Power Transistor Homobase - LF amplifier and switching, complementary 2N6109 |
SESCOSEM |
14 |
2N6109 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
15 |
2N6109 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
16 |
2N6109 |
40.000W Medium Power PNP Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 30 - 150 hFE. |
Continental Device India Limited |
17 |
2N6109 |
PNP power transistor |
FERRANTI |
18 |
2N6109 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
19 |
2N6109 |
POWER TRANSISTORS(7A,40W) |
MOSPEC Semiconductor |
20 |
2N6109 |
7A complementary silicon plastic 65W power PNP transistor |
Motorola |
21 |
2N6109 |
PNP Power Transistor TO-220 |
National Semiconductor |
22 |
2N6109 |
PNP Power Transistor |
National Semiconductor |
23 |
2N6109 |
PNP silicon DURAWATT™ POWER transistor 40W/7A |
National Semiconductor |
24 |
2N6109 |
Trans GP BJT PNP 50V 7A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
25 |
2N6109 |
Power 7A 50V Discrete PNP |
ON Semiconductor |
26 |
2N6109 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
27 |
2N6109 |
PNP Power transistor Epitaxial-Base - LF amplifier and switching, complementary 2N5492 |
SESCOSEM |
28 |
2N6109 |
Epitaxial-base silicon PNP transistor in Jedec TO-220 plastic package |
SGS-ATES |
29 |
2N6290 |
40.000W Medium Power NPN Plastic Leaded Transistor. 50V Vceo, 7.000A Ic, 2 hFE. Complementary 2N6109 |
Continental Device India Limited |
30 |
61090 |
SURFACE MOUNT (NPN) GENERAL PURPOSE TRANSISTOR |
Micropac Industries |
| | | |