No. |
Part Name |
Description |
Manufacturer |
1 |
1N6125 |
Transient Voltage Suppressor |
Microsemi |
2 |
1N6125 |
Diode TVS Single Bi-Dir 47.1V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
3 |
1N6125 |
500W BI-POLARITY TRANSIENT VOLTAGE SUPPRESSORS |
Semtech |
4 |
1N6125A |
Transient Voltage Suppressor |
Microsemi |
5 |
1N6125A |
Diode TVS Single Bi-Dir 47.1V 500W 2-Pin |
New Jersey Semiconductor |
6 |
1N6125A |
QPL 500 Watt Axial Leaded TVS |
Semtech |
7 |
1N6125Ae3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
8 |
1N6125AUS |
Transient Voltage Suppressor |
Microsemi |
9 |
1N6125AUSe3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
10 |
1N6125e3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
11 |
1N6125US |
Transient Voltage Suppressor |
Microsemi |
12 |
1N6125USe3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
13 |
2023-6125-10 |
2-4 GHz, Air dielectric directional coupler low loss, octave bandwidth |
MA-Com |
14 |
2023-6125-10 |
Air Dielectric Directional Couplers Low Loss, Octave Bandwidth |
Tyco Electronics |
15 |
2N6125 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
16 |
2N6125 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
17 |
2N6125 |
40.000W Medium Power PNP Plastic Leaded Transistor. 60V Vceo, 4.000A Ic, 25 - 100 hFE. |
Continental Device India Limited |
18 |
2N6125 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -60V. |
General Electric Solid State |
19 |
2N6125 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
20 |
2N6125 |
4A complementary silicon plastic 40W power PNP transistor |
Motorola |
21 |
2N6125 |
PNP Power Transistor TO-220 |
National Semiconductor |
22 |
2N6125 |
PNP Power Transistor |
National Semiconductor |
23 |
2N6125 |
PNP silicon power transistor |
National Semiconductor |
24 |
2N6125 |
Trans GP BJT PNP 60V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
25 |
2N6125 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
26 |
2N6125 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
27 |
2N6125 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
28 |
2SC6125 |
Power transistor for high-speed switching applications |
TOSHIBA |
29 |
ADS6125 |
Low Power 12-bit 125MSPS ADC with selectable parallel CMOS or LVDS outputs |
Texas Instruments |
30 |
ADS6125IRHBR |
Low Power 12-bit 125MSPS ADC with selectable parallel CMOS or LVDS outputs 32-VQFN -40 to 85 |
Texas Instruments |
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