No. |
Part Name |
Description |
Manufacturer |
1 |
1N6126 |
Transient Voltage Suppressor |
Microsemi |
2 |
1N6126 |
Diode TVS Single Bi-Dir 51.7V 500W 2-Pin Case G-95 |
New Jersey Semiconductor |
3 |
1N6126 |
500W BI-POLARITY TRANSIENT VOLTAGE SUPPRESSORS |
Semtech |
4 |
1N6126A |
Transient Voltage Suppressor |
Microsemi |
5 |
1N6126A |
Diode TVS Single Bi-Dir 51.7V 500W 2-Pin |
New Jersey Semiconductor |
6 |
1N6126A |
QPL 500 Watt Axial Leaded TVS |
Semtech |
7 |
1N6126Ae3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
8 |
1N6126AUS |
Transient Voltage Suppressor |
Microsemi |
9 |
1N6126AUSe3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
10 |
1N6126e3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
11 |
1N6126US |
Transient Voltage Suppressor |
Microsemi |
12 |
1N6126USe3 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
13 |
2023-6126-20 |
2-4 GHz, Air dielectric directional coupler low loss, octave bandwidth |
MA-Com |
14 |
2023-6126-20 |
Air Dielectric Directional Couplers Low Loss, Octave Bandwidth |
Tyco Electronics |
15 |
2N6126 |
Medium Power Linear and Switching Applications |
Boca Semiconductor Corporation |
16 |
2N6126 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
17 |
2N6126 |
40.000W Medium Power PNP Plastic Leaded Transistor. 80V Vceo, 4.000A Ic, 20 - 80 hFE. |
Continental Device India Limited |
18 |
2N6126 |
Epitaxial-base, silicon P-N-P VERSAWATT transistor. -80V. |
General Electric Solid State |
19 |
2N6126 |
COMPLEMENTARY SILICON PLASTIC POWER TRANSISTORS |
MOSPEC Semiconductor |
20 |
2N6126 |
4A complementary silicon plastic 40W power PNP transistor |
Motorola |
21 |
2N6126 |
PNP Power Transistor TO-220 |
National Semiconductor |
22 |
2N6126 |
PNP Power Transistor |
National Semiconductor |
23 |
2N6126 |
PNP silicon power transistor |
National Semiconductor |
24 |
2N6126 |
Trans GP BJT PNP 80V 4A 3-Pin(3+Tab) TO-220 Box |
New Jersey Semiconductor |
25 |
2N6126 |
Silicon PNP Power Transistors TO-220 package |
Savantic |
26 |
2N6126 |
Silicon epitaxial-base PNP medium power transistor |
SGS-ATES |
27 |
2N6126 |
Epitaxial-base transistor for linear and switching applications |
SGS-ATES |
28 |
2SC6126 |
Power transistor for high-speed switching applications |
TOSHIBA |
29 |
66126 |
SINGLE/DUAL CHANNEL, HERMETICALLY SEALED OPTOCOUPLER, SIMILAR TO 4N55 |
Micropac Industries |
30 |
66126-001 |
SINGLE/DUAL CHANNEL, HERMETICALLY SEALED OPTOCOUPLER, SIMILAR TO 4N55 |
Micropac Industries |
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