| No. |
Part Name |
Description |
Manufacturer |
| 1 |
ADM8616TABKSZ-RL |
Low Voltage Supervisory Circuit with Watchdog and Active-Low, Push-Pull Reset Output in 4-Lead SC70 |
Analog Devices |
| 2 |
ADM8616TABKSZ-RL7 |
Low Voltage Supervisory Circuit with Watchdog and Active-Low, Push-Pull Reset Output in 4-Lead SC70 |
Analog Devices |
| 3 |
ADM8616TAKS-RL |
Low-Voltage Manual Reset & Watchdog Supervisory Circuits in 4-Lead SC70 |
Analog Devices |
| 4 |
ADM8616TAKS-RL7 |
Low-Voltage Manual Reset & Watchdog Supervisory Circuits in 4-Lead SC70 |
Analog Devices |
| 5 |
BCP5616TA |
NPN MEDIUM POWER TRANSISTORS IN SOT223 |
Diodes |
| 6 |
BCP5616TC |
NPN MEDIUM POWER TRANSISTORS IN SOT223 |
Diodes |
| 7 |
BCX5616TA |
NPN MEDIUM POWER TRANSISTORS IN SOT89 |
Diodes |
| 8 |
HD404616TF |
4-Bit Single-Chip Microcomputer |
Hitachi Semiconductor |
| 9 |
IRF6616TR1 |
Leaded A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 106 amperes. |
International Rectifier |
| 10 |
IRF6616TR1PBF |
A 40V Single N-Channel HEXFET Power MOSFET in a DirectFET MX package rated at 106 amperes. |
International Rectifier |
| 11 |
K6F1616T6B |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 12 |
K6F1616T6B-EF55 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 13 |
K6F1616T6B-EF70 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 14 |
K6F1616T6B-F |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 15 |
K6F1616T6B-TF55 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 16 |
K6F1616T6B-TF70 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 17 |
K6F1616T6C |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 18 |
K6F1616T6C-F |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 19 |
K6F1616T6C-FF55 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 20 |
K6F1616T6C-FF70 |
1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
Samsung Electronic |
| 21 |
KIC7616T5 |
Analog CMOS Integrated Circuits |
Korea Electronics (KEC) |
| 22 |
MCP616T-I/MS |
The MCP616 operational amplifier (op amp) has a gain bandwidth product of 190 kHz with a low typical operating current of 19 µA ... |
Microchip |
| 23 |
MCP616T-I/SN |
The MCP616 operational amplifier (op amp) has a gain bandwidth product of 190 kHz with a low typical operating current of 19 µA ... |
Microchip |
| 24 |
MP7616TD |
15 V CMOS 16-Bit Multiplying Digital-to-Analog Converter |
Exar |
| 25 |
MSP430F2616TPM |
16-Bit Ultra-Low-Power MCU, 92KB Flash, 4KB RAM, 12-Bit ADC, Dual DAC, 2 USCI, HW Mult, DMA 64-LQFP -40 to 105 |
Texas Instruments |
| 26 |
MSP430F2616TPMR |
16-Bit Ultra-Low-Power MCU, 92KB Flash, 4KB RAM, 12-Bit ADC, Dual DAC, 2 USCI, HW Mult, DMA 64-LQFP -40 to 105 |
Texas Instruments |
| 27 |
MSP430F2616TPN |
16-Bit Ultra-Low-Power MCU, 92KB Flash, 4KB RAM, 12-Bit ADC, Dual DAC, 2 USCI, HW Mult, DMA 80-LQFP -40 to 105 |
Texas Instruments |
| 28 |
MSP430F2616TPNR |
16-Bit Ultra-Low-Power MCU, 92KB Flash, 4KB RAM, 12-Bit ADC, Dual DAC, 2 USCI, HW Mult, DMA 80-LQFP -40 to 105 |
Texas Instruments |
| 29 |
MSP430F2616TZQW |
16-Bit Ultra-Low-Power MCU, 92KB Flash, 4KB RAM, 12-Bit ADC, Dual DAC, 2 USCI, HW Mult, DMA 113-BGA MICROSTAR JUNIOR -40 to 105 |
Texas Instruments |
| 30 |
MSP430F2616TZQWR |
16-Bit Ultra-Low-Power MCU, 92KB Flash, 4KB RAM, 12-Bit ADC, Dual DAC, 2 USCI, HW Mult, DMA 113-BGA MICROSTAR JUNIOR -40 to 105 |
Texas Instruments |
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