No. |
Part Name |
Description |
Manufacturer |
1 |
2N6186 |
10A medium power PNP silicon transistor 60W 80V |
Motorola |
2 |
2N6186 |
Trans GP BJT PNP 80V 10A 3-Pin TO-59 |
New Jersey Semiconductor |
3 |
66186 |
TWO CHANNEL, HERMETICALLY SEALED OPTOCOUPLER PHOTOTRANSISTOR OUTPUT |
Micropac Industries |
4 |
66186-000 |
TWO CHANNEL, HERMETICALLY SEALED OPTOCOUPLER PHOTOTRANSISTOR OUTPUT |
Micropac Industries |
5 |
66186-002 |
TWO CHANNEL, HERMETICALLY SEALED OPTOCOUPLER PHOTOTRANSISTOR OUTPUT |
Micropac Industries |
6 |
66186-003 |
TWO CHANNEL, HERMETICALLY SEALED OPTOCOUPLER PHOTOTRANSISTOR OUTPUT |
Micropac Industries |
7 |
66186-004 |
TWO CHANNEL, HERMETICALLY SEALED OPTOCOUPLER PHOTOTRANSISTOR OUTPUT |
Micropac Industries |
8 |
BStR16186 |
Disc thyristor 800A 2800V |
Siemens |
9 |
BStR16186S10 |
Disc thyristor 800A 2800V |
Siemens |
10 |
BStR16186S9 |
Disc thyristor 800A 2800V |
Siemens |
11 |
BStR66186 |
Disc thyristor 800A 2800V |
Siemens |
12 |
BStR66186S10 |
Disc thyristor 800A 2800V |
Siemens |
13 |
BStR66186S9 |
Disc thyristor 800A 2800V |
Siemens |
14 |
DKI06186 |
Silicon N-Channel MOSFET |
Sanken |
15 |
DSW16186 |
DAICO Switches SPST, SPST |
DAICO Industries |
16 |
ISL6186XXC |
USB Port Power Supply Controller - Covering the Commercial Temperature Range of 0�C to +70�C |
Intersil |
17 |
ISL6186XXI |
USB Port Power Supply Controller - Covering the Industrial Temperature Range of -40�C to +85�C |
Intersil |
18 |
K4R761869A |
250 to 0.13V; 512/576Mbit short channel direct 1066MHz RDRAM (A-die) ; 1M x 16 / 18bit x 32s banks |
Samsung Electronic |
19 |
K4R761869A-F |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
20 |
K4R761869A-FBCCN1 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
21 |
K4R761869A-FCM8 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
22 |
K4R761869A-FCT9 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
23 |
K4R761869A-GCM8 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
24 |
K4R761869A-GCN1 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
25 |
K4R761869A-GCT9 |
576Mbit RDRAM (A-die) 1M x 18bit x 32s banks Direct RDRAMTM |
Samsung Electronic |
26 |
K7Q161862 |
512Kx36 & 1Mx18 QDRTM b2 SRAM |
Samsung Electronic |
27 |
K7Q161862B |
512Kx36 & 1Mx18 QDRTM b2 SRAM |
Samsung Electronic |
28 |
NJU26186 |
NJU26100 Series Hardware Specification |
New Japan Radio |
29 |
SFH6186 |
Optocouplers |
Infineon |
30 |
SFH6186 |
Optocoupler, Phototransistor Output, Low Input Current |
Vishay |
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