No. |
Part Name |
Description |
Manufacturer |
1 |
2N6248 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
2 |
2N6248 |
Epitaxial-base, silicon P-N-P high-power transistor. -110V, 125W. |
General Electric Solid State |
3 |
2N6248 |
Silicon PNP Power Transistors TO-3 package |
Savantic |
4 |
AN-6248 |
The ITR for Horizontal Deflection - Application Note |
RCA Solid State |
5 |
EL6248C |
3-Channel Laser Diode Driver w/Oscillator & APC Amplifier |
Elantec Semiconductor |
6 |
EL6248CU |
3-Channel Laser Diode Driver w/Oscillator & APC Amplifier |
Elantec Semiconductor |
7 |
FDMC86248 |
150V N-Channel Power Trench� MOSFET |
Fairchild Semiconductor |
8 |
KIA6248K |
BIPOLAR LINEAR INTEGRATED CIRCUIT (7.3W DUAL AUDIO POWER IC) |
Korea Electronics (KEC) |
9 |
LTC6248 |
180MHz, 1mA Power Efficient Rail-to-Rail I/O Op Amps |
Linear Technology |
10 |
LTC6248CMS#PBF |
Quad 180MHz, 1mA Power Efficient Rail-to-Rail I/O Op Amps |
Linear Technology |
11 |
LTC6248CMS#TRPBF |
Quad 180MHz, 1mA Power Efficient Rail-to-Rail I/O Op Amps |
Linear Technology |
12 |
LTC6248HMS#PBF |
Quad 180MHz, 1mA Power Efficient Rail-to-Rail I/O Op Amps |
Linear Technology |
13 |
LTC6248HMS#TRPBF |
Quad 180MHz, 1mA Power Efficient Rail-to-Rail I/O Op Amps |
Linear Technology |
14 |
LTC6248IMS#PBF |
Quad 180MHz, 1mA Power Efficient Rail-to-Rail I/O Op Amps |
Linear Technology |
15 |
LTC6248IMS#TRPBF |
Quad 180MHz, 1mA Power Efficient Rail-to-Rail I/O Op Amps |
Linear Technology |
16 |
M62481FP |
PICKUP SERVO SYSTEM WITH AUTOMATIC ADJUSTMENT |
Mitsubishi Electric Corporation |
17 |
MCM62486B |
32K x 9 Bit BurstRAM Synchronous Static RAM |
Motorola |
18 |
MCM62486BFN11 |
32K x 9 Bit BurstRAM Synchronous Static RAM |
Motorola |
19 |
MCM62486BFN12 |
32K x 9 Bit BurstRAM Synchronous Static RAM |
Motorola |
20 |
MCM62486BFN14 |
32K x 9 Bit BurstRAM Synchronous Static RAM |
Motorola |
21 |
MCM62486BFN19 |
32K x 9 Bit BurstRAM Synchronous Static RAM |
Motorola |
22 |
MK62486 |
VERY FAXT CMOS 32K x 9 CACHE BRAM |
ST Microelectronics |
23 |
MK62486Q19 |
Very fast CMOS 32K x 9 cache BRAM, 19MHz |
SGS Thomson Microelectronics |
24 |
MK62486Q24 |
Very fast CMOS 32K x 9 cache BRAM, 24MHz |
SGS Thomson Microelectronics |
25 |
MR16R16248EG0 |
Key Timing Parameters |
Samsung Electronic |
26 |
MR18R16248EG0 |
Key Timing Parameters |
Samsung Electronic |
27 |
NTE6248 |
Silicon Schottky Barrier Rectifier |
NTE Electronics |
28 |
PI3B16248 |
3.3V, 24-Bit to 48-BitMux/DeMux NanoSwitch |
Pericom Technology |
29 |
PI3B16248B |
3.3V, 24-Bit to 48-BitMux/DeMux NanoSwitch |
Pericom Technology |
30 |
PI3B16248BE |
3.3V, 24-Bit to 48-BitMux/DeMux NanoSwitch |
Pericom Technology |
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