| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BFP490 |
NPN Silicon RF Transistor (Q62702-F1721) |
Siemens |
| 2 |
C62702-C2487 |
NPN Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
| 3 |
C62702-C2488 |
PNP Silicon Digital Transistor (Switching circuit, inverter, interface circuit, driver circuit) |
Siemens |
| 4 |
C62702-C747 |
NPN Silicon AF Transistor (High current gain High collector current) |
Siemens |
| 5 |
C62702-C748 |
PNP Silicon AF Transistor (High current gain High collector current Low collector-emitter saturation voltage) |
Siemens |
| 6 |
C62702-C853 |
NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage |
Siemens |
| 7 |
C62702-C854 |
NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage |
Siemens |
| 8 |
C62702-C855 |
NPN Silicon Darlington Transistors (High current gain Low collector-emitter saturation voltage |
Siemens |
| 9 |
C62702-C941 |
PNP Silicon Darlington Transistors (High current gain High collector current) |
Siemens |
| 10 |
C62702-C942 |
PNP Silicon Darlington Transistors (High current gain High collector current) |
Siemens |
| 11 |
C62702-C943 |
PNP Silicon Darlington Transistors (High current gain High collector current) |
Siemens |
| 12 |
Q-62702-G66 |
GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Typical Gain Control range over 50dB) |
Siemens |
| 13 |
Q62702-A0042 |
Silicon Crossover Ring Quad Schottky Diode |
Siemens |
| 14 |
Q62702-A0043 |
Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers, phase detectors and modulators) |
Siemens |
| 15 |
Q62702-A0062 |
Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type) |
Siemens |
| 16 |
Q62702-A0960 |
Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) |
Siemens |
| 17 |
Q62702-A1004 |
Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) |
Siemens |
| 18 |
Q62702-A1006 |
Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers, phase detectors and modulators) |
Siemens |
| 19 |
Q62702-A1010 |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
Siemens |
| 20 |
Q62702-A1017 |
Silicon Dual Schottky Diode (High barrier diode for balanced mixers, phase detectors and modulators) |
Siemens |
| 21 |
Q62702-A1025 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 22 |
Q62702-A1028 |
Silicon Schottky Diode (Low Barrier diode for detectors up to GHz frequencies) |
Siemens |
| 23 |
Q62702-A1028 |
Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) |
Siemens |
| 24 |
Q62702-A1030 |
Silicon Switching Diode Array (For high speed switching applications Common cathode) |
Siemens |
| 25 |
Q62702-A1031 |
Silicon Switching Diode Array (For high speed switching applications Common anode) |
Siemens |
| 26 |
Q62702-A1036 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 27 |
Q62702-A1037 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 28 |
Q62702-A1038 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 29 |
Q62702-A1039 |
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) |
Siemens |
| 30 |
Q62702-A1041 |
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) |
Siemens |
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