| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N6288 |
TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR |
DC Components |
| 2 |
1N6288 |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 3 |
1N6288 |
51 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 4 |
1N6288 |
TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR |
General Semiconductor |
| 5 |
1N6288 |
Transient Voltage Suppressor |
Microsemi |
| 6 |
1N6288 |
Diode TVS Single Uni-Dir 41.3V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 7 |
1N6288 |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR |
TRSYS |
| 8 |
1N6288 |
TRANSZORB�Transient Voltage Suppressors |
Vishay |
| 9 |
1N6288A |
TECHNICAL SPECIFICATIONS OF TRANSIENT VOLTAGE SUPPRESSOR |
DC Components |
| 10 |
1N6288A |
TRANSIENT VOLTAGE SUPPRESSOR |
EIC discrete Semiconductors |
| 11 |
1N6288A |
51 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 12 |
1N6288A |
TRANSZORB TRANSIENT VOLTAGE SUPPRESSOR |
General Semiconductor |
| 13 |
1N6288A |
Transient Voltage Suppressor |
Microsemi |
| 14 |
1N6288A |
Diode TVS Single Uni-Dir 43.6V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 15 |
1N6288A |
Zener 51V 1500W 5% |
ON Semiconductor |
| 16 |
1N6288A |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR |
TRSYS |
| 17 |
1N6288A |
TRANSZORB�Transient Voltage Suppressors |
Vishay |
| 18 |
1N6288AE3/TR13 |
Standard Unidirectional and Bidirectional TVS |
Microsemi |
| 19 |
1N6288ARL4 |
Zener 51V 1500W 5% |
ON Semiconductor |
| 20 |
1N6288C |
51 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 21 |
1N6288C |
Diode TVS Single Bi-Dir 41.3V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 22 |
1N6288C |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR |
TRSYS |
| 23 |
1N6288CA |
51 V, 1 mA, 1500 W unidirectional and bidirectional transient voltage suppressor diode |
Fagor |
| 24 |
1N6288CA |
Diode TVS Single Bi-Dir 43.6V 1.5KW 2-Pin Case 1 |
New Jersey Semiconductor |
| 25 |
1N6288CA |
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR |
TRSYS |
| 26 |
2N6288 |
EPITAXIAL-BASE, SILICON N-P-N AND P-N-P VERSAWATT TRANSISTORS |
Boca Semiconductor Corporation |
| 27 |
2N6288 |
Leaded Power Transistor General Purpose |
Central Semiconductor |
| 28 |
2N6288 |
40.000W Medium Power NPN Plastic Leaded Transistor. 30V Vceo, 7.000A Ic, 30 - 150 hFE. Complementary 2N6111 |
Continental Device India Limited |
| 29 |
2N6288 |
Epitaxial-base, silicon N-P-N VERSAWATT transistor. 40V. |
General Electric Solid State |
| 30 |
2N6288 |
POWER TRANSISTORS(7A,40W) |
MOSPEC Semiconductor |
| | | |
