| No. |
Part Name |
Description |
Manufacturer |
| 1 |
16C62X |
EPROM-Based 8-Bit CMOS Microcontroller |
Microchip |
| 2 |
430P562X5600 |
Metalized Polyester Film Capacitors Wrap-and-Fill |
Vishay |
| 3 |
430P562X9600 |
Metalized Polyester Film Capacitors Wrap-and-Fill |
Vishay |
| 4 |
5082-762X |
7.6mm (0.3 inch)/10.9mm (0.43 inch) Seven Segment Display |
Agilent (Hewlett-Packard) |
| 5 |
AN432 |
ST6 - USING ST62XX I/O PORTS SAFELY |
SGS Thomson Microelectronics |
| 6 |
ATAM862X-TNQJ4 |
Microcontroller with UHF ASK/FSK transmitter. Program memory 4 kB flash. Data-EEPROM 2 x 512 bit. RF frequency range 433 MHz. x-hardware revision. |
Atmel |
| 7 |
ATAM862X-TNSJ4 |
Microcontroller with UHF ASK/FSK transmitter. Program memory 4 kB flash. Data-EEPROM 2 x 512 bit. RF frequency range 433 MHz. x-hardware revision. |
Atmel |
| 8 |
C-562X |
DUAL DIGITS DISPLAY |
PARA Light |
| 9 |
C-562X-10 |
DUAL DIGITS DISPLAY |
PARA Light |
| 10 |
CNX862XG |
6V; 60mA non-base lead optically coupled isolator phototransistor output |
ISOCOM |
| 11 |
CY7C1262XV18-366BZXC |
36-Mbit QDR� II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
| 12 |
CY7C1262XV18-450BZXC |
36-Mbit QDR� II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
| 13 |
CY7C1562XV18-366BZC |
72-Mbit QDR� II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
| 14 |
CY7C1562XV18-366BZXC |
72-Mbit QDR� II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
| 15 |
CY7C1562XV18-450BZC |
72-Mbit QDR� II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
| 16 |
CY7C1562XV18-450BZXC |
72-Mbit QDR� II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
| 17 |
CY7C2262XV18-366BZXC |
36-Mbit QDR� II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT |
Cypress |
| 18 |
CY7C2262XV18-450BZXC |
36-Mbit QDR� II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT |
Cypress |
| 19 |
CY7C2562XV18-366BZXC |
72-Mbit QDR� II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT |
Cypress |
| 20 |
CY7C2562XV18-450BZXC |
72-Mbit QDR� II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT |
Cypress |
| 21 |
ERA2AEB162X |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 22 |
ERA2AEB1962X |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 23 |
ERA2AEB2262X |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 24 |
ERA2AEB3162X |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 25 |
ERA2AEB362X |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 26 |
ERA2AEB5362X |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 27 |
ERA2AEB562X |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 28 |
ERA2AEB5762X |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 29 |
ERA2AEB8062X |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
| 30 |
ERA2AEB8662X |
High Precision Thin Film Chip Resistors, High Reliability Type |
Panasonic |
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