No. |
Part Name |
Description |
Manufacturer |
1 |
AD6633BBCZ |
Multi-channel Digital Upconverter with VersaCREST™ Crest Reduction Engine |
Analog Devices |
2 |
CY7C1263XV18-633BZXC |
36-Mbit QDR� II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
3 |
CY7C1265XV18-633BZXC |
36-Mbit QDR� II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
4 |
CY7C1268XV18-633BZXC |
36-Mbit DDR II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
5 |
CY7C1270XV18-633BZXC |
36-Mbit DDR II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
6 |
CY7C1563XV18-633BZXC |
72-Mbit QDR� II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
7 |
CY7C1565XV18-633BZXC |
72-Mbit QDR� II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
8 |
CY7C1568XV18-633BZXC |
72-Mbit DDR II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
9 |
CY7C1570XV18-633BZXC |
72-Mbit DDR II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) |
Cypress |
10 |
CY7C2263XV18-633BZXC |
36-Mbit QDR� II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT |
Cypress |
11 |
CY7C2265XV18-633BZXC |
36-Mbit QDR� II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT |
Cypress |
12 |
CY7C2268XV18-633BZXC |
36-Mbit DDR II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT |
Cypress |
13 |
CY7C2270XV18-633BZXC |
36-Mbit DDR II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT |
Cypress |
14 |
CY7C2563XV18-633BZC |
72-Mbit QDR� II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT |
Cypress |
15 |
CY7C2563XV18-633BZXC |
72-Mbit QDR� II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT |
Cypress |
16 |
CY7C2565XV18-633BZC |
72-Mbit QDR� II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT |
Cypress |
17 |
CY7C2565XV18-633BZXC |
72-Mbit QDR� II+ Xtreme SRAM Four-Word Burst Architecture (2.5 Cycle Read Latency) with ODT |
Cypress |
18 |
CY7C2568XV18-633BZXC |
72-Mbit DDR II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT |
Cypress |
19 |
CY7C2570XV18-633BZXC |
72-Mbit DDR II+ Xtreme SRAM Two-Word Burst Architecture (2.5 Cycle Read Latency) with ODT |
Cypress |
20 |
MAX633BC/D |
5V Fixed/Adjustable Output, Step-Up Switching Regulators |
MAXIM - Dallas Semiconductor |
21 |
MAX633BCJA |
5V Fixed/Adjustable Output, Step-Up Switching Regulators |
MAXIM - Dallas Semiconductor |
22 |
MAX633BCPA |
CMOS fixed +15V output voltage, adjustable output with 2 resistors step-up switching regulator. 10% output accuracy. |
MAXIM - Dallas Semiconductor |
23 |
MAX633BCSA |
CMOS fixed +15V output voltage, adjustable output with 2 resistors step-up switching regulator. 10% output accuracy. |
MAXIM - Dallas Semiconductor |
24 |
MAX633BC_D |
CMOS fixed +15V output voltage, adjustable output with 2 resistors step-up switching regulator. 10% output accuracy. |
MAXIM - Dallas Semiconductor |
25 |
MAX633BEJA |
CMOS fixed +15V output voltage, adjustable output with 2 resistors step-up switching regulator. 10% output accuracy. |
MAXIM - Dallas Semiconductor |
26 |
MAX633BEPA |
CMOS fixed +15V output voltage, adjustable output with 2 resistors step-up switching regulator. 10% output accuracy. |
MAXIM - Dallas Semiconductor |
27 |
MAX633BESA |
CMOS fixed +15V output voltage, adjustable output with 2 resistors step-up switching regulator. 10% output accuracy. |
MAXIM - Dallas Semiconductor |
28 |
MAX633BMJA |
CMOS fixed +15V output voltage, adjustable output with 2 resistors step-up switching regulator. 10% output accuracy. |
MAXIM - Dallas Semiconductor |
29 |
MAX633BMJA/883B |
5V Fixed/Adjustable Output, Step-Up Switching Regulators |
MAXIM - Dallas Semiconductor |
30 |
MP7633BD |
CMOS 10-BIT MULTIPLYING DIGITAL-TO-ANALOG CONVERTER |
etc |
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