| No. |
Part Name |
Description |
Manufacturer |
| 1 |
AUIRLR3636TR |
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a D-Pak Package |
International Rectifier |
| 2 |
BC636TA |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 3 |
BC636TAR |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 4 |
BC636TF |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 5 |
BC636TFR |
PNP Epitaxial Silicon Transistor |
Fairchild Semiconductor |
| 6 |
HYM75V32M636T6 |
SDRAM - SO DIMM 256MB |
Hynix Semiconductor |
| 7 |
IC61S25636T |
SYNCHRONOUS STATIC RAM, Pipelined Synchronous SRAM |
ICSI |
| 8 |
IC61SF25636T |
SYNCHRONOUS STATIC RAM, Flow Through |
ICSI |
| 9 |
IC61SF25636T-6.5TQ |
6.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 10 |
IC61SF25636T-6.5TQI |
6.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 11 |
IC61SF25636T-7.5TQ |
7.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 12 |
IC61SF25636T-7.5TQI |
7.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 13 |
IC61SF25636T-8.5TQ |
8.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 14 |
IC61SF25636T-8.5TQI |
8.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 15 |
IC61SF25636T-9.5TQ |
9.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 16 |
IC61SF25636T-9.5TQI |
9.5ns; 2.5-3.3V; 256K x 36; 8Mb SYNCBURST flow through static RAM |
ICSI |
| 17 |
IRF6636TR1 |
Leaded A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET (ST) package rated at 81 amperes. |
International Rectifier |
| 18 |
IRF6636TR1PBF |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET (ST) package rated at 81 amperes. |
International Rectifier |
| 19 |
IRF6636TRPBF |
A 20V Single N-Channel HEXFET Power MOSFET in a DirectFET (ST) package rated at 81 amperes. |
International Rectifier |
| 20 |
IRLR3636TRLPBF |
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
| 21 |
IRLR3636TRPBF |
60V Single N-Channel HEXFET Power MOSFET in a D-Pak package |
International Rectifier |
| 22 |
IS61LF25636T-10TQ |
256K x 36 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 23 |
IS61LF25636T-10TQI |
256K x 36 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 24 |
IS61LF25636T-8.5TQ |
256K x 36 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 25 |
IS61LF25636T-8.5TQI |
256K x 36 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 26 |
IS61LF25636T-9TQ |
256K x 36 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 27 |
IS61LF25636T-9TQI |
256K x 36 synchronous flow-through static RAM |
Integrated Silicon Solution Inc |
| 28 |
IS61LPD25636T-133TQ |
256K x 36 synchronous pipeline, double-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 29 |
IS61LPD25636T-133TQI |
256K x 32 synchronous pipeline, double-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| 30 |
IS61LPD25636T-150TQ |
256K x 36 synchronous pipeline, double-cycle deselect static RAM |
Integrated Silicon Solution Inc |
| | | |
