| No. |
Part Name |
Description |
Manufacturer |
| 1 |
BR93LC46-W |
6416bits serial EEPROM |
ROHM |
| 2 |
BR93LC46F-W |
6416bits serial EEPROM |
ROHM |
| 3 |
BR93LC46FJ-W |
6416bits serial EEPROM |
ROHM |
| 4 |
BR93LC46FV-W |
6416bits serial EEPROM |
ROHM |
| 5 |
BR93LC46RF-W |
6416bits serial EEPROM |
ROHM |
| 6 |
BR93LC46RFJ-W |
6416bits serial EEPROM |
ROHM |
| 7 |
IS62V6416BLL-10B |
128K x 16 low voltage, ultra low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 8 |
IS62V6416BLL-10BI |
128K x 16 low voltage, ultra low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 9 |
IS62V6416BLL-10K |
128K x 16 low voltage, ultra low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 10 |
IS62V6416BLL-10KI |
128K x 16 low voltage, ultra low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 11 |
IS62V6416BLL-10T |
128K x 16 low voltage, ultra low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 12 |
IS62V6416BLL-10TI |
128K x 16 low voltage, ultra low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 13 |
IS62V6416BLL-12B |
128K x 16 low voltage, ultra low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 14 |
IS62V6416BLL-12BI |
128K x 16 low voltage, ultra low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 15 |
IS62V6416BLL-12K |
128K x 16 low voltage, ultra low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 16 |
IS62V6416BLL-12KI |
128K x 16 low voltage, ultra low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 17 |
IS62V6416BLL-12T |
128K x 16 low voltage, ultra low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 18 |
IS62V6416BLL-12TI |
128K x 16 low voltage, ultra low power CMOS static RAM |
Integrated Silicon Solution Inc |
| 19 |
K1B6416B6C |
4Mx16 bit Synchronous Burst Uni-Transistor Random Access Memory |
Samsung Electronic |
| 20 |
LC866416B |
8-Bit Single Chip Microcontroller |
SANYO |
| 21 |
T6416B |
Silicon Triacs designed for use with IC zero-voltage switches as triggering circuits |
RCA Solid State |
| 22 |
TC59S6416BFT |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 23 |
TC59S6416BFT-10 |
1,048,576-words x 4BANKS x 16-BITS synchronous dynamic RAM |
TOSHIBA |
| 24 |
TC59S6416BFT-80 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 25 |
TC59S6416BFT/BFTL-80 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
| 26 |
TC59S6416BFT/BFTL10 |
1,048,576/2,097,152/4,194,304-WORDSx4BANKSx16/8/4-BIT S SYNCHRONOUS DYNAMIC RAM |
TOSHIBA |
| 27 |
TC59S6416BFTL |
MOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC |
TOSHIBA |
| 28 |
TC59S6416BFTL-10 |
1,048,576-words x 4BANKS x 16-BITS synchronous dynamic RAM |
TOSHIBA |
| 29 |
TC59S6416BFTL-80 |
1,048,576-words x 4BANKS x 16-BITS synchronous dynamic RAM |
TOSHIBA |
| 30 |
UT62L6416BS-55L |
Access time: 55 ns, 64 K x 16 Bit low power CMOS SRAM |
UTRON Technology |
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