| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N6481 |
SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER |
General Semiconductor |
| 2 |
1N6481 |
Surface Mount Glass Passivated Junction Rectifiers, Forward Current 1.0A, Rev. Voltage 400V |
Vishay |
| 3 |
BD46481G |
Voltage detectors |
ROHM |
| 4 |
BD46481G-TR |
Voltage Detector with Fixed Delay Time |
ROHM |
| 5 |
GMA26481C |
2.3 INCH (58.4 mm) 4x8 DOT MATRIX STICK DISPLAY |
Fairchild Semiconductor |
| 6 |
GMA26481C |
2.3 INCH (58.4 mm) 4X8 DOT MATRIX STICK DISPLAY |
QT Optoelectronics |
| 7 |
K5C6481NT(B)M |
Multi-Chip Package MEMORY Data Sheet |
Samsung Electronic |
| 8 |
M64811AGP |
1.1GHz/500MHz DUAL PLL FREQUENCY SYNTHESIZER FOR DIGITAL CELLULAR PHONE |
Mitsubishi Electric Corporation |
| 9 |
MA46481 |
GaAs constant gamma=1.25 hyperabrupt tuning varactor |
MA-Com |
| 10 |
MA46481 |
GaAs Constant Gamma Hyperabrupt Tuning Varactors |
Tyco Electronics |
| 11 |
MAN6481C |
0.56 INCH (14.2MM) SINGLE DIGIT STICK DISPLAY DIAMOND Font |
Fairchild Semiconductor |
| 12 |
MAX6481 |
300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit |
MAXIM - Dallas Semiconductor |
| 13 |
MAX6481BL15BD3 |
300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit |
MAXIM - Dallas Semiconductor |
| 14 |
MAX6481BL15BD3-T |
1.5 V, 150 ms, 300 mA LDO linear regulator with internal microprocessor reset circuit |
MAXIM - Dallas Semiconductor |
| 15 |
MAX6481BL18AD3 |
300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit |
MAXIM - Dallas Semiconductor |
| 16 |
MAX6481BL18AD3-T |
1.8 V, 150 ms, 300 mA LDO linear regulator with internal microprocessor reset circuit |
MAXIM - Dallas Semiconductor |
| 17 |
MAX6481BL25BD3 |
300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit |
MAXIM - Dallas Semiconductor |
| 18 |
MAX6481BL25BD3-T |
2.5 V, 150 ms, 300 mA LDO linear regulator with internal microprocessor reset circuit |
MAXIM - Dallas Semiconductor |
| 19 |
MAX6481BL28AD3 |
300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit |
MAXIM - Dallas Semiconductor |
| 20 |
MAX6481BL28AD3-T |
2.8 V, 150 ms, 300 mA LDO linear regulator with internal microprocessor reset circuit |
MAXIM - Dallas Semiconductor |
| 21 |
MAX6481BL30BD3 |
300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit |
MAXIM - Dallas Semiconductor |
| 22 |
MAX6481BL30BD3-T |
3.0 V, 150 ms, 300 mA LDO linear regulator with internal microprocessor reset circuit |
MAXIM - Dallas Semiconductor |
| 23 |
MAX6481BL33AD3 |
300mA LDO Linear Regulators with Internal Microprocessor Reset Circuit |
MAXIM - Dallas Semiconductor |
| 24 |
MAX6481BL33AD3-T |
3.3 V, 150 ms, 300 mA LDO linear regulator with internal microprocessor reset circuit |
MAXIM - Dallas Semiconductor |
| 25 |
MCP6481 |
Linear- Op Amps |
Microchip |
| 26 |
MCP6481T-E/LTY |
Linear- Op Amps |
Microchip |
| 27 |
MCP6481T-E/OT |
Linear- Op Amps |
Microchip |
| 28 |
SN6481 |
16-bit active element memory |
Transitron Electronic |
| 29 |
TMS664814 |
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
Texas Instruments |
| 30 |
TMS66481410 |
4 194 304 BY 4-BIT/2 097 152 BY 8-BIT/1 048 576 BY 16-BIT BY 4-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES |
Texas Instruments |
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