| No. |
Part Name |
Description |
Manufacturer |
| 1 |
1N4764AP/TR12 |
Zener Voltage Regulator Diode |
Microsemi |
| 2 |
1N4764AP/TR8 |
Zener Voltage Regulator Diode |
Microsemi |
| 3 |
1N4764APe3/TR12 |
Zener Voltage Regulator Diode |
Microsemi |
| 4 |
1N4764APe3/TR8 |
Zener Voltage Regulator Diode |
Microsemi |
| 5 |
74F164APC |
Serial-In Parallel-Out Shift Register |
Fairchild Semiconductor |
| 6 |
74F164APC |
Serial-In/ Parallel-Out Shift Register |
National Semiconductor |
| 7 |
CFB940AP |
2.000W Power PNP Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFD1264AP |
Continental Device India Limited |
| 8 |
CFD1264AP |
2.000W Power NPN Plastic Leaded Transistor. 180V Vceo, 2.000A Ic, 100 - 240 hFE. Complementary CFB940AP |
Continental Device India Limited |
| 9 |
HA16664APS |
Switching regulator |
Hitachi Semiconductor |
| 10 |
HM4864AP-12 |
65536-word x 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
| 11 |
HM4864AP-15 |
65536-word x 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
| 12 |
HM4864AP-20 |
65536-word x 1-bit Dynamic Random Access Memory |
Hitachi Semiconductor |
| 13 |
HM6264AP-10 |
8192-word x 8-bit high speed CMOS static RAM, 100ns |
Hitachi Semiconductor |
| 14 |
HM6264AP-12 |
8192-word x 8-bit high speed CMOS static RAM, 120ns |
Hitachi Semiconductor |
| 15 |
HM6264AP-15 |
8192-word x 8-bit high speed CMOS static RAM, 150ns |
Hitachi Semiconductor |
| 16 |
KM41464AP |
64K X 4 BIT DYNAMIC RAM WITH PAGE MODE |
Samsung Electronic |
| 17 |
KM41464AP-12 |
64K X 4 BIT DYNAMIC RAM WITH PAGE MODE |
Samsung Electronic |
| 18 |
KM41464AP-15 |
64K X 4 BIT DYNAMIC RAM WITH PAGE MODE |
Samsung Electronic |
| 19 |
MH16S64APFC-7 |
1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 20 |
MH16S64APFC-7L |
1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 21 |
MH16S64APFC-8 |
1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 22 |
MH16S64APFC-8L |
1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 23 |
MH16S64APHB-6 |
1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)Synchronous DRAM |
Mitsubishi Electric Corporation |
| 24 |
MH16S64APHB-7 |
1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)Synchronous DRAM |
Mitsubishi Electric Corporation |
| 25 |
MH16S64APHB-8 |
1,073,741,824-BIT (16,777,216 - WORD BY 64-BIT)Synchronous DRAM |
Mitsubishi Electric Corporation |
| 26 |
MH32S64APFB-7 |
2147483648-BIT (33554432 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 27 |
MH32S64APFB-8 |
2147483648-BIT (33554432 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 28 |
MH32S64APHB-6 |
2,147,483,648-BIT (33,554,432 - WORD BY 64-BIT)Synchronous DRAM |
Mitsubishi Electric Corporation |
| 29 |
MH32S64APHB-7 |
2,147,483,648-BIT (33,554,432 - WORD BY 64-BIT)Synchronous DRAM |
Mitsubishi Electric Corporation |
| 30 |
MH32S64APHB-8 |
2,147,483,648-BIT (33,554,432 - WORD BY 64-BIT)Synchronous DRAM |
Mitsubishi Electric Corporation |
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