| No. |
Part Name |
Description |
Manufacturer |
| 1 |
LM8364BALMF20 |
Micropower Undervoltage Sensing Circuits |
National Semiconductor |
| 2 |
LM8364BALMF20 |
Active Low Voltage Monitor with Low Quiescent Current and 2.5% Threshold Accuracy 5-SOT-23 -40 to 85 |
Texas Instruments |
| 3 |
LM8364BALMF20/NOPB |
Active Low Voltage Monitor with Low Quiescent Current and 2.5% Threshold Accuracy 5-SOT-23 -40 to 85 |
Texas Instruments |
| 4 |
LM8364BALMF30 |
Micropower Undervoltage Sensing Circuits |
National Semiconductor |
| 5 |
LM8364BALMF45 |
Micropower Undervoltage Sensing Circuits |
National Semiconductor |
| 6 |
LM8364BALMFX20 |
Micropower Undervoltage Sensing Circuits |
National Semiconductor |
| 7 |
LM8364BALMFX20/NOPB |
Active Low Voltage Monitor with Low Quiescent Current and 2.5% Threshold Accuracy 5-SOT-23 -40 to 85 |
Texas Instruments |
| 8 |
LM8364BALMFX30 |
Micropower Undervoltage Sensing Circuits |
National Semiconductor |
| 9 |
LM8364BALMFX45 |
Micropower Undervoltage Sensing Circuits |
National Semiconductor |
| 10 |
MAX5064BATC |
125V/2A, high-speed, half-bridge MOSFET driver |
MAXIM - Dallas Semiconductor |
| 11 |
MAX5064BATC+ |
125V/2A, High-Speed, Half-Bridge MOSFET Drivers |
MAXIM - Dallas Semiconductor |
| 12 |
MAX5064BATC+T |
125V/2A, High-Speed, Half-Bridge MOSFET Drivers |
MAXIM - Dallas Semiconductor |
| 13 |
MH16S64BAMD-10 |
1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 14 |
MH16S64BAMD-6 |
1,073,741,824-BIT ( 16,777,216-WORD BY 64-BIT ) Synchronous DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 15 |
MH16S64BAMD-7 |
1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 16 |
MH16S64BAMD-8 |
1073741824-BIT (16777216 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 17 |
MH8S64BALD-10 |
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 18 |
MH8S64BALD-6 |
536,870,912-BIT ( 8,388,608-WORD BY 64-BIT ) Synchronous DYNAMIC RAM |
Mitsubishi Electric Corporation |
| 19 |
MH8S64BALD-7 |
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 20 |
MH8S64BALD-8 |
536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM |
Mitsubishi Electric Corporation |
| 21 |
SST26VF064BA |
Memory |
Microchip |
| 22 |
SST26VF064BA-104I/MF |
Memory |
Microchip |
| 23 |
SST26VF064BA-104I/SM |
Memory |
Microchip |
| 24 |
SST26VF064BA-104I/SO |
Memory |
Microchip |
| 25 |
SST26VF064BAT-104I/MF |
Memory |
Microchip |
| 26 |
SST26VF064BAT-104I/SM |
Memory |
Microchip |
| 27 |
SST26VF064BAT-104I/SO |
Memory |
Microchip |
| | | |
