No. |
Part Name |
Description |
Manufacturer |
1 |
AD664BJ |
Monolithic 12-Bit Quad DAC |
Analog Devices |
2 |
CAT28C64BJ-12 |
64K-Bit CMOS PARALLEL E2PROM |
Catalyst Semiconductor |
3 |
CAT28C64BJ-12T |
64K-Bit CMOS PARALLEL E2PROM |
Catalyst Semiconductor |
4 |
CAT28C64BJ-15 |
64K-Bit CMOS PARALLEL E2PROM |
Catalyst Semiconductor |
5 |
CAT28C64BJ-15T |
64K-Bit CMOS PARALLEL E2PROM |
Catalyst Semiconductor |
6 |
CAT28C64BJA-12 |
64K-Bit CMOS PARALLEL E2PROM |
Catalyst Semiconductor |
7 |
CAT28C64BJA-12T |
64K-Bit CMOS PARALLEL E2PROM |
Catalyst Semiconductor |
8 |
CAT28C64BJA-15 |
64K-Bit CMOS PARALLEL E2PROM |
Catalyst Semiconductor |
9 |
CAT28C64BJA-15T |
64K-Bit CMOS PARALLEL E2PROM |
Catalyst Semiconductor |
10 |
CAT28C64BJI-12 |
64K-Bit CMOS PARALLEL E2PROM |
Catalyst Semiconductor |
11 |
CAT28C64BJI-12T |
64K-Bit CMOS PARALLEL E2PROM |
Catalyst Semiconductor |
12 |
CAT28C64BJI-15 |
64K-Bit CMOS PARALLEL E2PROM |
Catalyst Semiconductor |
13 |
CAT28C64BJI-15T |
64K-Bit CMOS PARALLEL E2PROM |
Catalyst Semiconductor |
14 |
LC321664BJ |
1 MEG (65536 words X 16 bits) DRAM Fast Page Mode, Byte Write |
SANYO |
15 |
LC321664BJ-70 |
1 MEG (65536 words x 16 bit) DRAM, fast page mode, byte write |
SANYO |
16 |
LC321664BJ-80 |
1 MEG (65536 words x 16 bit) DRAM fast page mode, byte write |
SANYO |
17 |
LZ2364BJ |
1/3-type CCD Area Sensors with 470 k Pixels |
SHARP |
18 |
SN54ALS564BJ |
Octal D-type Edge Triggered Flip-Flops with 3-state Outputs |
Texas Instruments |
19 |
SNJ54ALS564BJ |
Octal D-type Edge Triggered Flip-Flops with 3-state Outputs |
Texas Instruments |
20 |
TC551664BJ |
65,536-WORD BY 16-BIT CMOS STATIC RAM |
TOSHIBA |
21 |
TC551664BJ-12 |
65,536-WORD BY 16-BIT CMOS STATIC RAM |
TOSHIBA |
22 |
TC551664BJ-15 |
65,536-WORD BY 16-BIT CMOS STATIC RAM |
TOSHIBA |
23 |
TC55V1664BJ-10 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16 BIT CMOS STATIC RAM |
TOSHIBA |
24 |
TC55V1664BJ-12 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16 BIT CMOS STATIC RAM |
TOSHIBA |
25 |
TC55V1664BJ-15 |
MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 65,536-WORD BY 16 BIT CMOS STATIC RAM |
TOSHIBA |
26 |
TM4EP64BJN |
EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
Texas Instruments |
27 |
TM4EP64BJN-50 |
EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
Texas Instruments |
28 |
TM4EP64BJN-60 |
EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
Texas Instruments |
29 |
TM4EP64BJN-70 |
EXTENDED-DATA-OUT DYNAMIC RAM MODULES |
Texas Instruments |
30 |
UT6164BJC-10 |
32K X 8 BIT HIGH SPEED CMOS SRAM |
UTRON Technology |
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