| No. |
Part Name |
Description |
Manufacturer |
| 1 |
29LV650 |
64M (4M x 16) BIT |
Fujitsu Microelectronics |
| 2 |
AMP374P6453BT1-C1H |
64M X 72 SDRAM DIMM with ECC based on 32M X 8, 4 Banks, 8K REFRESH, 3.3V Synchronous DRAMs |
etc |
| 3 |
AMP374P6453BT1-C1HS |
64M X 72 SDRAM DIMM with ECC based on 32M X 8, 4 Banks, 8K REFRESH, 3.3V Synchronous DRAMs |
etc |
| 4 |
AMP374P6453BT1C1H |
64M X 72 SDRAM DIMM with ECC based on 32M X 8, 4 Banks, 8K REFRESH, 3.3V Synchronous DRAMs |
etc |
| 5 |
AT45DB642 |
64M bit, 2.7-Volt Only Dual-Interface Flash with Two 1056-Byte SRAM Buffers. |
Atmel |
| 6 |
AT49BV6416C |
64M bit, 2.7-Volt Page Mode Flash Memory, Bottom Boot |
Atmel |
| 7 |
AT49BV6416CT |
64M bit, 2.7-Volt Page Mode Flash Memory, Top Boot |
Atmel |
| 8 |
AT49BV6416T |
64M bit, 2.7-Volt Page Mode Flash Memory, Top Boot |
Atmel |
| 9 |
DS_K9F1208U0M |
64M x 8 Bit NAND Flash Memory |
Samsung Electronic |
| 10 |
DS_K9K1208U0A |
64M x 8 Bit NAND Flash Memory |
Samsung Electronic |
| 11 |
GLT41316-35J4 |
35ns; 64M x 16 CMOS dynamic RAM with fast page mode |
G-LINK Technology |
| 12 |
GLT41316-35TC |
35ns; 64M x 16 CMOS dynamic RAM with fast page mode |
G-LINK Technology |
| 13 |
GLT41316-40J4 |
40ns; 64M x 16 CMOS dynamic RAM with fast page mode |
G-LINK Technology |
| 14 |
GLT41316-40TC |
40ns; 64M x 16 CMOS dynamic RAM with fast page mode |
G-LINK Technology |
| 15 |
GLT41316-45J4 |
45ns; 64M x 16 CMOS dynamic RAM with fast page mode |
G-LINK Technology |
| 16 |
GLT41316-45TC |
45ns; 64M x 16 CMOS dynamic RAM with fast page mode |
G-LINK Technology |
| 17 |
HM5164165F |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 18 |
HM5164165FJ-5 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 19 |
HM5164165FJ-6 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 20 |
HM5164165FLJ-5 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 21 |
HM5164165FLJ-6 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 22 |
HM5164165FLTT-5 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 23 |
HM5164165FLTT-6 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 24 |
HM5164165FTT-5 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 25 |
HM5164165FTT-6 |
64M EDO DRAM (4-Mword x 16-bit) 8k refresh/4k refresh |
Hitachi Semiconductor |
| 26 |
HM5164165J-5 |
64M EDO DRAM (4-Mword x 16-bit), 50ns |
Hitachi Semiconductor |
| 27 |
HM5164165J-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
| 28 |
HM5164165LJ-5 |
64M EDO DRAM (4-Mword x 16-bit), 50ns |
Hitachi Semiconductor |
| 29 |
HM5164165LJ-6 |
64M EDO DRAM (4-Mword x 16-bit), 60ns |
Hitachi Semiconductor |
| 30 |
HM5164165LTT-5 |
64M EDO DRAM (4-Mword x 16-bit), 50ns |
Hitachi Semiconductor |
| | | |
