| No. |
Part Name |
Description |
Manufacturer |
| 1 |
74VHC164MSCX |
8-Bit Serial-In Parallel-Out Shift Register |
Fairchild Semiconductor |
| 2 |
CSR09B564MS |
TANTALUM HERMETICALLY SEALED / AXIAL |
Kemet Corporation |
| 3 |
CSR13B564MS |
TANTALUM HERMETICALLY SEALED / AXIAL |
Kemet Corporation |
| 4 |
CSR21B564MS |
TANTALUM HERMETICALLY SEALED / AXIAL |
Kemet Corporation |
| 5 |
CSR23B564MS |
TANTALUM HERMETICALLY SEALED / AXIAL |
Kemet Corporation |
| 6 |
CSR33B564MS |
TANTALUM HERMETICALLY SEALED / AXIAL |
Kemet Corporation |
| 7 |
CSR91B564MS |
TANTALUM HERMETICALLY SEALED / AXIAL |
Kemet Corporation |
| 8 |
HCS164MS |
Register, Serial-In/Parrallel-Out, 8-Bit, Rad-Hard, High-Speed, CMOS, Logic |
Intersil |
| 9 |
HCTS164MS |
Register, Serial-In/Parrallel-Out, 8-Bit, TTL Inputs, Rad-Hard, High-Speed, CMOS, Logic |
Intersil |
| 10 |
HCTS164MS |
Register, Serial-In/Parrallel-Out, 8-Bit, TTL Inputs, Rad-Hard, High-Speed, CMOS, Logic |
Intersil |
| 11 |
KM416C1004CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
| 12 |
KM416C1004CJ-5 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
| 13 |
KM416C1004CJ-6 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64ms |
Samsung Electronic |
| 14 |
KM416V1004CJ-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
| 15 |
KM416V1004CJ-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
| 16 |
KM416V1004CJ-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
| 17 |
KM416V1004CT-45 |
1M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
| 18 |
KM416V1004CT-50 |
1M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
| 19 |
KM416V1004CT-60 |
1M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=64ms |
Samsung Electronic |
| 20 |
M38064MS-XXXFS |
RAM size: 640bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
| 21 |
M38064MSDXXXGP |
RAM size: 640bytes; single-chip 8-bit CMOS microcomputer |
Mitsubishi Electric Corporation |
| 22 |
MAX1438B |
Octal, 12-Bit, 64Msps, 1.8V ADC with Serial LVDS Outputs |
MAXIM - Dallas Semiconductor |
| 23 |
MAX1438BETK+ |
Octal, 12-Bit, 64Msps, 1.8V ADC with Serial LVDS Outputs |
MAXIM - Dallas Semiconductor |
| 24 |
MAX1438BETK+T |
Octal, 12-Bit, 64Msps, 1.8V ADC with Serial LVDS Outputs |
MAXIM - Dallas Semiconductor |
| 25 |
MAX664MSA/PR |
Dual Mode™ 5V Programmable Micropower Voltage Regulators |
MAXIM - Dallas Semiconductor |
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