| No. |
Part Name |
Description |
Manufacturer |
| 1 |
15KP130A |
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/165.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 209 V @ Ipp = 72 A. |
Panjit International Inc |
| 2 |
15KP130CA |
Glass passivated junction transient voltage suppressor. Vrwm = 130 V. Vbr(min/max) = 144/165.5 V @ It = 5.0 mA. Ir = 10 uA. Vc = 209 V @ Ipp = 72 A. |
Panjit International Inc |
| 3 |
D2525P915 |
Wavelength-selected isolated DFB laser module with PMF. ITU frequency 191.5. Wavelength 1565.50. Tolerance +-0.4nm. |
Agere Systems |
| 4 |
DS1099U-E |
65.50 kHz, Low-frequency dual econ oscillator |
MAXIM - Dallas Semiconductor |
| 5 |
HM53461P-10 |
100ns; V(cc): -0.5 to +7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 6 |
HM53461P-12 |
120ns; V(cc): -0.5 to +7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 7 |
HM53461P-15 |
150ns; V(cc): -0.5 to +7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 8 |
HM53461ZP-10 |
100ns; V(cc): -0.5 to +7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 9 |
HM53461ZP-12 |
120ns; V(cc): -0.5 to +7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 10 |
HM53461ZP-15 |
150ns; V(cc): -0.5 to +7.0V; 50mA; 1W; 65.536-word x 4-bit multiport CMOS video RAM |
Hitachi Semiconductor |
| 11 |
SC1602N |
CHARACTER LCD MODULE display format: 16x2; module size: 65.5x36.7x9.6; viewing size: 54.0x14.4; character size: 2.55x4.99; dot size: 0.47x0.58; |
SUNLIKE |
| 12 |
SMJ4464 |
5V supply (10% tolerance); 50mA; 1W; 65.536-word by 4-bit dynamic random-access memory |
Texas Instruments |
| 13 |
SMJ4464-12 |
120ns; 5V supply (10% tolerance); 50mA; 1W; 65.536-word by 4-bit dynamic random-access memory |
Texas Instruments |
| 14 |
SMJ4464-15 |
150ns; 5V supply (10% tolerance); 50mA; 1W; 65.536-word by 4-bit dynamic random-access memory |
Texas Instruments |
| 15 |
SMJ4464-20 |
200ns; 5V supply (10% tolerance); 50mA; 1W; 65.536-word by 4-bit dynamic random-access memory |
Texas Instruments |
| 16 |
TC55465AJ-15 |
15ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 17 |
TC55465AJ-20 |
20ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 18 |
TC55465AJ-25 |
25ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 19 |
TC55465AJ-35 |
35ns; 100mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 20 |
TC55465AP-20 |
20ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 21 |
TC55465AP-25 |
25ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
| 22 |
TC55465AP-35 |
35ns; 120mA; V(cc): -0.1 to +7V; V(in/out); -2.0 to +7.0V; 1W; silicon gate CMOS 65.536 words x 4 Bits CMOS static RAM |
TOSHIBA |
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