No. |
Part Name |
Description |
Manufacturer |
1 |
HY57V653220BTC |
4 Banks x 512K x 32Bit Synchronous DRAM |
Hynix Semiconductor |
2 |
HY57V653220BTC-10 |
4 Banks x 512K x 32Bit Synchronous DRAM |
Hynix Semiconductor |
3 |
HY57V653220BTC-10P |
4 Banks x 512K x 32Bit Synchronous DRAM |
Hynix Semiconductor |
4 |
HY57V653220BTC-5 |
4 Banks x 512K x 32Bit Synchronous DRAM |
Hynix Semiconductor |
5 |
HY57V653220BTC-55 |
4 Banks x 512K x 32Bit Synchronous DRAM |
Hynix Semiconductor |
6 |
HY57V653220BTC-6 |
4 Banks x 512K x 32Bit Synchronous DRAM |
Hynix Semiconductor |
7 |
HY57V653220BTC-7 |
4 Banks x 512K x 32Bit Synchronous DRAM |
Hynix Semiconductor |
8 |
HY57V653220BTC-8 |
4 Banks x 512K x 32Bit Synchronous DRAM |
Hynix Semiconductor |
9 |
MB81ES653225 |
Consumer/Embedded Application Specific Memory for SiP |
Fujitsu Microelectronics |
10 |
MB81ES653225-12 |
Consumer/Embedded Application Specific Memory for SiP |
Fujitsu Microelectronics |
11 |
MB81ES653225-12L |
Consumer/Embedded Application Specific Memory for SiP |
Fujitsu Microelectronics |
12 |
UPD65322 |
Channel-less CMOS gate array employing 0.25 um technology (CMOS-10HD) |
NEC |
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